2006
DOI: 10.1063/1.2173534
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Chip-Packaging Interaction and Reliability Impact on Cu/Low k Interconnects

Abstract: The packaging process can increase the driving force for interfacial delamination and significantly impacts the reliability of the low k chip. In this study we investigated the packaging effect due to die attach process where a high thermal load occurs during solder reflow before underfilling. With the high thermal load and without the underfill, the chip-package interaction is maximized and can become most detrimental to low k chip reliability. Both SiLK and MSQ dielectrics were investigated to examine the in… Show more

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Cited by 16 publications
(3 citation statements)
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“…2. At the interconnect level, the Energy Release Rate (ERR) is calculated as the driving force for the interfacial delamination using Modified Virtual Crack Closure (MVCC) technique [5].…”
Section: Simulation Modelmentioning
confidence: 99%
See 1 more Smart Citation
“…2. At the interconnect level, the Energy Release Rate (ERR) is calculated as the driving force for the interfacial delamination using Modified Virtual Crack Closure (MVCC) technique [5].…”
Section: Simulation Modelmentioning
confidence: 99%
“…The mismatch in thermal expansion/shrinkage between chip and package can lead to significant deformation, both locally and globally. The local stress due to Chip Package Interaction (CPI) can cause peeling and drives the interfacial delamination in Cu/low-k interconnects, and this raises serious reliability concern [2][3][4][5]. Thermomechanical stability is a serious issue for microelectronic packaging, its impact to product yield and manufacturing cost intensifies as low-k dielectrics and leadfree solders are being adopted by the industry.…”
Section: Introductionmentioning
confidence: 99%
“…With the increasing utilization of low-dielectric to enhance signal transmission speed, delamination between these dielectrics and metallization has been frequently observed as a result of either poor adhesion or coupled deformation of chip and substrate during assembly and packaging [23]. To relieve the stress accumulated in the dielectric, a compliant interconnect structure [24] was fabricated by first forming a polymeric dome by photolithography and then electroplating to create 3-D interconnection structure, as shown in Fig.…”
Section: Introductionmentioning
confidence: 99%