Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy

Grün, M.; Storzum, A.; Hetterich, M.; Kamilli, A.; Send, W.; Walter, T.; Klingshirn, C.

doi:10.1016/s0022-0248(98)01375-x

Cited by 26 publications

(13 citation statements)

References 9 publications

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“…"Alloys and composites" section) . 123 Other known n-type dopants are F S (conductivities ~2 ×10 -7 S cm -1 ), 124 Cl S , 125 In Zn , 126 among others, and co-doping strategies have been employed as p-type dopants (e.g. N/Li, 127 and In/Ag/N).…”

Section: Znchmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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Wide band gap semiconductors are essential for today's electronic devices and energy applications due to their high optical transparency, as well as controllable carrier concentration and electrical conductivity. There are many categories of materials that can be defined as wide band gap semiconductors. The most intensively investigated are transparent conductive oxides (TCOs) such as tin-doped indium oxide (ITO) and amorphous In-Ga-Zn-O (IGZO) used in displays, carbides (e.g. SiC) and nitrides (e.g. GaN) used in power electronics, as well as emerging halides (e.g. g-CuI) and 2D electronic materials (e.g. graphene) used in various optoelectronic devices. Compared to these prominent materials families, chalcogen-based (Ch = S, Se, Te) wide band gap semiconductors are less heavily investigated but stand out due to their propensity for ptype doping, high mobilities, high valence band positions (i.e. low ionization potentials), and broad applications in electronic devices such as CdTe solar cells. This manuscript provides a review of wide band gap chalcogenide semiconductors. First, we outline general materials design parameters of high performing transparent conductors, as well as the theoretical and experimental underpinnings of the corresponding research methods. We proceed to summarize progress in wide band gap (E G > 2 eV) chalcogenide materials, such as II-VI MCh binaries, CuMCh 2 chalcopyrites, Cu 3 MCh 4 sulvanites, mixed anion layered CuMCh(O,F), and 2D materials, among others, and discuss computational predictions of potential new candidates in this family, highlighting their optical and electrical properties. We finally review applications of chalcogenide wide band gap semiconductors, e.g. photovoltaic and photoelectrochemical solar cells, transparent transistors, and light emitting diodes, that employ wide band gap chalcogenides as either an active or passive layer. By examining, categorizing, and discussing prospective directions in wide band gap chalcogenides, this review aims to inspire continued research on this emerging class of transparent conductors and to enable future innovations for optoelectronic devices.

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Section: Znchmentioning

confidence: 99%

Wide Band Gap Chalcogenide Semiconductors

et al. 2020

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“…Doping levels up to n = 10 21 cm −3 can be reached. Doping with group VII elements on the anion site, which proved very efficient in ZnSe and other II b –VI compounds (38 and references therein) is much less investigated in ZnO.…”

Section: Dopingmentioning

confidence: 99%

65 years of ZnO research – old and very recent results

Klingshirn

Fallert

Zhou

et al. 2010

Physica Status Solidi (b)

383

244

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The research on ZnO has a long history but experiences an extremely vivid revival during the last 10 years. We critically discuss in this didactical review old and new results concentrating on optical properties but presenting shortly also a few aspects of other fields like transport or magnetic properties. We start generally with the properties of bulk samples, proceed then to epitaxial layers and nanorods, which have in many respects properties identical to bulk samples and end in several cases with data on quantum wells or nano crystallites. Since it is a didactical review, we present explicitly misconceptions found frequently in submitted or published papers, with the aim to help young scientists entering this field to improve the quality of their submitted manuscripts. We finish with an appendix on quasi two-and one-dimensional exciton cavity polaritons.

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“…A series of degenerately doped thick layers (Ͼ1 m) of cubic CdS was prepared and investigated by Hall effect measurements. 9 These data yield the free-electron densities n 3d . The screened plasma frequencies p of these samples were obtained from infrared reflection spectra recorded at nearly normal incidence to the surface and evaluated by a Drude-Lorentz fit.…”

Section: Electron Mass Of Cubic Cdsmentioning

confidence: 98%

“…High n-type doping levels are attainable in both ZnSe and CdS, with free-electron concentrations up to 1.4ϫ10 19 cm Ϫ3 and 8ϫ10 19 cm Ϫ3 , respectively. 9 Consequently, two-dimensional electron gas densities in excess of 1ϫ10 13 cm Ϫ2 were observed in modulation-doped structures. 10 A second interesting feature of the CdS/ZnSe system relies on the fast relaxation from the higher subbands to the ground state.…”

Section: Introductionmentioning

confidence: 99%

Intersubband and interminiband spectroscopy of doped and undoped CdS/ZnSe multiple quantum wells and superlattices

et al. 2002

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In cubic CdS/ZnSe type-II heterostructures collective excitations have been studied using infrared spectroscopy. The CdS/ZnSe structures were grown by solid-source molecular-beam epitaxy on semi-insulating GaAs substrates. Highly n-type-doped multiple-quantum-well and superlattice samples show strong intersubband and interminiband absorption in the midinfrared. The validity of the polarization selection rule is verified experimentally. The CdS/ZnSe conduction band offset is determined using a combination of interband and intersubband spectroscopy. Measured transition energies agree well to model calculations if many-body effects and band nonparabolicity are included. Intensity-dependent pump and probe measurements on doped and undoped samples reveal a fast increase of the photoinduced absorption signal at low pump intensities. At high pump intensities the absorption signal saturates. This behavior is explained by the existence of a subgroup of long-lived photogenerated electron-hole pairs. An observed redshift of the photoinduced interminiband transitions is explained by filling of the lowest miniband. The effective electron mass of cubic CdS is determined from thick films using infrared reflection spectroscopy.

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Chlorine doping of cubic CdS and ZnS grown by compound source molecular-beam epitaxy

Cited by 26 publications

References 9 publications

Wide Band Gap Chalcogenide Semiconductors

Wide Band Gap Chalcogenide Semiconductors

65 years of ZnO research – old and very recent results

Intersubband and interminiband spectroscopy of doped and undoped CdS/ZnSe multiple quantum wells and superlattices

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