Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant

Huber, A. M.; Morillot, G.; Linh, Nuyen T.; Favennec, P.N.; Deveaud, B.; Toulouse, B.

doi:10.1063/1.90700

Cited by 104 publications

(12 citation statements)

References 5 publications

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“…Surface oxides will enhance the yield of positive secondary ions within the first hundred angstroms (32,33). Surface oxides will enhance the yield of positive secondary ions within the first hundred angstroms (32,33).…”

Section: Discussionmentioning

confidence: 99%

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Oberstar

Streetman

Baker

et al. 1982

J. Electrochem. Soc.

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The migration of implanted ~Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T I> 700~ t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fl~tences as low as 1 • 10 '3 cm -2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550~ anneals of 100 keV, 10 '5 cm -2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fluence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.* Electrochemical Society Student Member * * Electrochemical Society Active Member. ABSTRACT Using secondary ion mass spectrometry (SIMS) the annealing characteristics of amorphizing implants of Mg andSi in semi-insulating InP have been examined. Substantial redistribution of Mg and Fe occurs during 30 rain anneals of InP implanted with i0 I~ cm -~, 250 keV Mg. Atomic profiles indicate that Mg and Fe are gettered out of the amorphous zone into an implant damaged, bulk region. Examination of electron channelling patterns (ECP) from samples annealed for 30 rain at 550 ~ and 650~ show no discernible patterns at the surface or at depths near the theoretical damage profile peak. Weak channelling patterns are visible at the calculated peak damage depth, however, in samples annealed at 750~ for 30 and 60 rain. Flat tails of Mg extending over a distance of about 1 ~tm are seen in the bulk. Little redistribution of Si occurs during 30 rain, 750~ anneals of 5 • 10 TM cm -~, 240 keV Si implants. Redistribution of Fe is observed in these Si implanted samples, however, resulting in an accumulation region near the implanted Si peak.In the preceding paper, 9Be implants into semi-insulating InP were shown to result in considerable redistribution of Be, Fe, and Cr upon annealing. In this * Electrochem~.cal Society Student Member. ** Eleetrochemlcal Society Active Member.

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Section: Discussionmentioning

confidence: 99%

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Oberstar

Streetman

Baker

et al. 1982

J. Electrochem. Soc.

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“…As for the excess doping efficiency, a number of workers (12)(13)(14)(15)(16) reported that a conductive n-type surface layer is formed during the thermal anneal of …”

Section: ( 1 + -If#mentioning

confidence: 99%

Study of Encapsulants for Annealing Si‐Implanted GaAs

Onuma

Hirao

Sugawa

1982

J. Electrochem. Soc.

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GATE dently make an estimate of the accuracy of the final solution.Computers.--Computations were performed on the Cray-1 at Bell Laboratories, Murray Hill. A Honeywell 6000 was used as the host computer to the Cray-1. A DEC Vax was used for file maintenance: files were sent from the Vax to the Cray-1 via the Honeywell; output files were returned in the same manner to the Vax. Calculations typically took between 150 and 300 sec of Cray-1 time. ABSTRACTThe effects of encapsulation on the carrier concentration profiles of Si implanted into GaAs have been studied. Large differences were found in the carrier concentration profiles among the materials used for the annealing cap. Diffusion of Si was enhanced by SiO2 encapsulation but was negligibly small with Si3N4 encapsulation and capless. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-19 to IP

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“…[8] However, unlike undoped SIGaAs, GaAs : Cr is not stable under thermal annealing. [9,10] Thus, it is expected that GaAs : Cr would have a different behavior with HELI irradiation compared to that of SI-GaAs. In this work, we essentially address this issue -the difference in structural evolution of SI-GaAs and GaAs : Cr by HELI irradiation.…”

Section: Introductionmentioning

confidence: 99%

Effect of high‐energy light‐ion irradiation on SI‐GaAs and GaAs:Cr as observed by Raman spectroscopy

Mishra

Kabiraj

Roy

et al. 2011

J Raman Spectroscopy

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The structural evolutions of high-energy (50 MeV) lithium ion (Li 3+ ) irradiated undoped semi-insulating GaAs (SI-GaAs) and chromium-doped SI-GaAs (GaAs : Cr) were investigated by Raman measurements. It is shown that high-energy Li 3+ irradiation causes amorphization beyond a fluence of 3 × 10 13 ions/cm 2 in undoped SI-GaAs. Interestingly, the same fluence of ions does not seem to affect the crystallinity in GaAs : Cr appreciably. The effect of ion irradiation on the change in lattice ordering and anharmonicity of the phonon modes of undoped SI-GaAs and GaAs : Cr is also compared.

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Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant

Cited by 104 publications

References 5 publications

SIMS Studies of 9Be Implants in Semi‐Insulating InP

SIMS Studies of 9Be Implants in Semi‐Insulating InP

Study of Encapsulants for Annealing Si‐Implanted GaAs

Effect of high‐energy light‐ion irradiation on SI‐GaAs and GaAs:Cr as observed by Raman spectroscopy

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