GATE dently make an estimate of the accuracy of the final solution.Computers.--Computations were performed on the Cray-1 at Bell Laboratories, Murray Hill. A Honeywell 6000 was used as the host computer to the Cray-1. A DEC Vax was used for file maintenance: files were sent from the Vax to the Cray-1 via the Honeywell; output files were returned in the same manner to the Vax. Calculations typically took between 150 and 300 sec of Cray-1 time. ABSTRACTThe effects of encapsulation on the carrier concentration profiles of Si implanted into GaAs have been studied. Large differences were found in the carrier concentration profiles among the materials used for the annealing cap. Diffusion of Si was enhanced by SiO2 encapsulation but was negligibly small with Si3N4 encapsulation and capless. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-19 to IP

Carrier-concentration profiles of Si in semi-insulating GaAs have been obtained by C-V measurement techniques. Si + or Si + + ions were implanted at energies ranging from 50 to 600 keY, and annealing was carried out with Si3N4 encapsulants. Range parameters such as the projected range Xp and the projected standard deviation .:1Xp were experimentally determined by use of depths at the peak carrier concentration and at the live value of the peak carrier concentration of the profiles. It was found that .:1Xp was strongly dependent on the Cr contents of substrates while Xp was not. The measured carrier concentrations could be approximated by the Gaussian distribution, and values of Xp were in good agreement with the theoretical value of the projected range Rp. However, .:1Xp tended to saturate as the incident energies increased and deviated from the theoretical value of the projected standard deviation .:1Rp.