CIGS absorber layer with double grading Ga profile for highly efficient solar cells

Saadat, M.; Moradi, Mehrdad; Zahedifar, M.

doi:10.1016/j.spmi.2016.02.036

Cited by 36 publications

(11 citation statements)

References 27 publications

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“…Many research works have highlighted the positive influence of band gap profiling in CIGS structures on the generation and collection of minority carriers. − Lafuente-Sampietro et al studied the impact of double grading on the charge-carrier transport of a CIGS-based PV cell. It is shown that by a judicious choice of the notch position of the conduction band, the double grading allows benefiting from the advantages of both front grading and back grading. , An efficiency of 19.83% was recorded for a 2 μm thick absorber coat. However, the effects of reducing depth of the active layer on charge-carrier transport efficiency were not evaluated.…”

Section: Introductionmentioning

confidence: 99%

“…It is shown that by a judicious choice of the notch position of the conduction band, the double grading allows benefiting from the advantages of both front grading and back grading. 19 , 20 An efficiency of 19.83% was recorded for a 2 μm thick absorber coat. However, the effects of reducing depth of the active layer on charge-carrier transport efficiency were not evaluated.…”

Section: Introductionmentioning

confidence: 99%

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Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

et al. 2023

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In this research article, we carry out investigation on compensating the efficiency loss in thin-film CIGS photovoltaic (PV) cell due to absorber coat depth reduction. We demonstrate that the efficiency loss is mainly caused by the disruption of the charge-carrier transport. We propose an architecture engineered with a stepped band gap profile for improving the efficiency of charge-carrier transport and collection. By modifying the gallium content, we tuned the band gap profile of the active layer of a reference experimental cell from which we previously collected all parameters. Using the simulator environment SCAPS-1D, we modeled a three-steps stacking profile of active layer with different gallium contents from one layer to another. Based on the results obtained, the band gap configuration herein proposed appears to be a prospective strategy for high-performance ultrathin Cu(In,Ga)Se2-based PV cell architecture engineering. By combining this approach with the optimization of the active layer doping, we enhanced the yields of the reference structure from 18.93% for a 2 μm active layer to 23.36% for only 0.5 μm thickness of active layer, that is, an enhancement of 4.4%. The fill factor increased from 73.24 to 81.73%, that is, an additional stability indicator value of 8.5%. The good values of the obtained efficiency and the improvement of the fill factor value are relevant indicators of a stable device. Active layer stacking combined with a stepped band gap profile and doping level optimization is definitely providing new perspectives in thin-film CIGS high-performance PV cell achievement.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

et al. 2023

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“…Bandgap grading is an approach used to enhance the performance of CIGS-based solar cells, which is achieved by incorporating Ga content during the absorber layer deposition. Replacing In content with Ga content changes the absorber bandgap and electron affinity due to the shift in the conduction band edge [17,18]. Bandgap engineering is beneficial as it helps in reducing recombination losses (i.e., improving V OC ) and enhancing carrier collection (i.e., enhancing J SC ), which improves solar cell performance [19].…”

Section: Introductionmentioning

confidence: 99%

Simulation of new thin film Zn(O,S)/CIGS solar cell with bandgap grading

2023

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Copper-Indium-Gallium-diSelenide (CIGS) thin film solar cell is a promising candidate for energy harvesting because of its high absorption coefficient and low cost compared to silicon-based solar cells. Absorber layer bandgap grading is a suitable method to improve CIGS thin film solar cell performance. Bandgap grading leads to the decrease of the recombination rate at the rear surface, which increases the open circuit voltage. Furthermore, bandgap grading improves the short circuit current due to the enhancement of collection probability. This paper introduces various routes for improving the performance of thin film CIGS solar cells by using bandgap grading. As a first step, both the bandgap energy and the thickness of the CIGS absorber layer of a uniform bandgap profile are optimized to get the best performance. Simulation is performed using SCAPS software and optimization results show that CIGS absorber layer with a bandgap of 1.2 eV and a thickness of 0.7 µm achieves a 22.48% efficiency. Then, bandgap grading with a parabolic distribution of various profiles is investigated and compared. It is found that with parabolic double bandgap grading profile, which is a combination of front and back grading, an efficiency of up to 24.16% is achieved. This improvement is obtained using a gallium composition ratio of 0.1 for the minimal bandgap at 0.1 µm and 0.13 µm from the back contact and front contact, respectively. This result represents a 7.47% improvement compared to the baseline structure of a CIGS solar cell.

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“…Because of the increasing need for human to get cheap energy for generating electricity, designing solar cells with lower cost and higher efficiency is highly important (Ullah et al , 2014). In comparison to crystalline silicon solar cells, manufacturing of thin film solar cells, especially “Cu(In, Ga)Se 2 solar cell” is more cost-effective (Saadat et al , 2016; Mostefaoui et al , 2015; Benmir and Aida, 2013; Rajan et al , 2018). Copper indium gallium selenide (CIGS) has numerous advantages, namely, high absorption coefficient throughout visible spectrum and tunable bandgap energy, ranging from 1.04 e V to 1.68 e V (Benmir and Aida, 2013; Doriani et al , 2015; Rampino et al , 2012).…”

Section: Introductionmentioning

confidence: 99%

“…Although CIGS solar cell has come to mass production, it needs further optimization to gain enhanced efficiency cells and low-cost fabrication process. Various factors may contribute to increase the efficiency of CIGS cells, namely, thickness of layers (Benmir and Aida, 2013), bandgap engineering, especially for absorbing layers (Saadat et al , 2016; Doriani et al , 2015), adding a second absorbing layer (Yang et al , 2008), using various materials as absorbing or buffer layers (Benmir and Aida, 2013), doping density and temperature (Benabbas et al , 2014; Mezghache and Hadjoudja, 2013).…”

Section: Introductionmentioning

confidence: 99%

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

Sajadnia

Dehghani

Noraeepoor

et al. 2020

WJE

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Purpose The purpose of this study is to design and optimize copper indium gallium selenide (CIGS) thin film solar cells. Design/methodology/approach A novel bi-layer CIGS thin film solar cell based on SnS is designed. To improve the performance of the CIGS based thin film solar cell a tin sulfide (SnS) layer is added to the structure, as back surface field and second absorbing layer. Defect recombination centers have a significant effect on the performance of CIGS solar cells by changing recombination rate and charge density. Therefore, performance of the proposed structure is investigated in two stages successively, considering typical and maximum reported trap density for both CIGS and SnS. To achieve valid results, the authors use previously reported experimental parameters in the simulations. Findings First by considering the typical reported trap density for both SnS and CIGS, high efficiency of 36%, was obtained. Afterward maximum reported trap densities of 1 × 1019 and 5.6 × 1015 cm−3 were considered for SnS and CIGS, respectively. The efficiency of the optimized cell is 27.17% which is achieved in CIGS and SnS thicknesses of cell are 0.3 and 0.1 µm, respectively. Therefore, even in this case, the obtained efficiency is well greater than previous structures while the absorbing layer thickness is low. Originality/value Having results similar to practical CIGS solar cells, the impact of the defects of SnS and CIGS layers was investigated. It was found that affixing SnS between CIGS and Mo layers causes a significant improvement in the efficiency of CIGS thin-film solar cell.

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CIGS absorber layer with double grading Ga profile for highly efficient solar cells

Cited by 36 publications

References 27 publications

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

Simulation of new thin film Zn(O,S)/CIGS solar cell with bandgap grading

Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells

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CIGS absorber layer with double grading Ga profile for highly efficient solar cells

Cited by 36 publications

References 27 publications

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers─SCAPS Modeling

Simulation of new thin film Zn(O,S)/CIGS solar cell with bandgap grading

Highly improvement in efficiency of Cu(In,Ga)Se2 thin film solar cells

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Highly improvement in efficiency of Cu(In,Ga)Se₂ thin film solar cells