CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process

Jseng, Yi-Yen; Chao, Chin-Jung; Sung, Huan-Hsin; Chen, Tien-Ching

doi:10.1016/j.mssp.2018.07.020

Cited by 11 publications

(2 citation statements)

References 24 publications

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“…This deep trap level can act as an active recombination center, resulting in an increased rate of charge recombination at the interface of CISSe/CdTe or grain boundary, and a broadening of the band gap of CISSe, which negatively impacts the solar cell device performance [60]. On the other hand, the substitutional configuration of Sb S and Sb Se defects leads to the activation of shallow donor traps, presumably due to a deficiency of anion atoms [61][62][63][64]. The trap level of unoccupied spin-down states for Sb S and Sb Se defects is located at 58 meV and 107 meV below the conduction band, respectively.…”

Section: Electronic Structurementioning

confidence: 99%

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

Mazalan,

Abd Aziz,

Saidina Amin

2023

Phys. Scr.

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Metal chalcogenide-based semiconductors are gaining attention for optoelectronic applications like thin-film photovoltaics (PV). Sb dopant incorporation in CuIn(S,Se)2 (CISSe) solar cell has been proven to significantly enhance PV performance, as demonstrated in our previous experimental work. However, the underlying mechanisms behind this improvement remained unclear. In this study, we report on the influence of substitutionally doped Sb defect on the structural, formation energy, band structure, and optical absorption properties in CISSe, employing the hybrid HSE06 functional within the density functional theory framework. We find that the Sb prefers to substitute at In site, resulting in the most stable Sb-doped CISSe structure. Under cation-poor growth conditions, Sb prefers to substitute on In sites, while under anion-poor growth conditions, it shows a preference for substituting on Se sites. Interestingly, only SbIn defects do not form impurity states in the band gap. Additionally, SbIn, SbS, and SbSe show a reduction in the band gap. Our results reveal that Sb-doped CISSe exhibits enhanced optical absorption in the IR to visible regions, leading to increased photocurrent generation and improved photovoltaic device efficiency, consistent with our experimental findings. These findings provide valuable theoretical insights into the influence of Sb-doping in CISSe, aiding the design of effective metal chalcogenide PV.

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Section: Electronic Structurementioning

confidence: 99%

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

Mazalan,

Abd Aziz,

Saidina Amin

2023

Phys. Scr.

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“…CIGS films with broad single-phase composition range and tunable bandgaps have attracted considerable attention as light absorbers for highly efficient photovoltaic devices [1][2][3]. Various vacuum processes are generally utilized to fabricate CIGS films, including co-evaporation processes and two-step fabrication processes that involve sputtering precursor and post-selenization reaction [4][5][6]. The efficiency of CIGS solar cells fabricated via co-evaporation method exceeds 20% [7].…”

Section: Introductionmentioning

confidence: 99%

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Som

2020

Mater. Res. Express

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The morphology and photovoltaic properties of the solution-based Cu(In, Ga)Se 2 films are effectively improved via the incorporation of copper-indium back-end layers in the precursor films. The effects on the concentrations of bimetal-ions solutions to prepare copper-indium back-end layers are investigated in this study. The incorporation of copper-indium back-end layer in the precursor film enhances the internal diffusion between gallium-ions and indium-ions during selenization reaction. Hence, the porous structure in the back-contact region of prepared CIGS films becomes densified, and the bandgap distribution of films shows a gradient profile. The densified morphology and gradient bandgap reduce the carrier recombination and improve the carrier collection of solar cells. In contrast to the pristine precursor film, the precursor film with a copper-indium back-end layer increase the conversion efficiency of prepared solar cells from 8.34% to 11.13%. The enhancement of conversion efficiency is attributed to the improvement of short-circuit current density and fill factor from 25.70 mA cm −2 to 31.79 mA cm −2 and 57.65% to 65.70%, respectively. This study reveals that the photovoltaic properties of solution-based CIGS solar cells can be improved significantly via the incorporation of copper-indium back-end layers into the precursor films. OPEN ACCESS RECEIVED

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Bilayer CIGS-based solar cell device for enhanced performance: a numerical approach

2021

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CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process

Cited by 11 publications

References 24 publications

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells

Bilayer CIGS-based solar cell device for enhanced performance: a numerical approach

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CIGS thin film and device performance produced through a variation Ga concentration during three-stage growth process

Cited by 11 publications

References 24 publications

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)2 solar cell absorber

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)2 solar cell absorber

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se2 films: enhancement of photovoltaic performance of fabricated solar cells

Bilayer CIGS-based solar cell device for enhanced performance: a numerical approach

Contact Info

Product

Resources

About

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

DFT insights into the effects of substitutionally doped Sb defects in CuIn(S,Se)₂ solar cell absorber

Incorporation of copper–indium back-end layers in the solution-based Cu(In, Ga)Se₂ films: enhancement of photovoltaic performance of fabricated solar cells