Circuit Effect on Collection Mechanisms Involved in Single Event Phenomena: Application to the Response of a NMOS Transistor in a 90 nm SRAM Cell

Optimization of SEU Simulations for SRAM Cells Reliability under Radiation

“…The only difference is the break of the loop when the bit-flip occurs, so the threshold drain value is not exactly the same between SPICE and TCAD simulations modes. It was expected because previous work has shown than the circuit response to current injection is different from the circuit response to current collection [2].…”

“…It was shown in a previous work [2] that simulating an unloaded transistor (i.e. with a fixed voltage) does not induce the same current response at the struck node as simulating the same transistor included into a circuit.…”

Analysis of Single Event Effect on SRAM Based on TCAD Simulation

“…In SRAM, the drain and surrounding of the OFF NOMOS is the main sensitive area [2] (N1 NMOS is the main sensitive node). From the figure, we can see that the N1 NMOS is constructed in 3D TCAD technology to simulate single event effect caused by ion strikes on or near the drain of the NMOS.…”

A tool for the automatic analysis of single events effects on electronic circuits

“…The current source injects any waveform the user defines in order to accurately materialize the ion/wave impact. Most commonly used waveforms refer to the double exponential, PWD signals or simple pulses [4], [6], [8]. Auxiliar Sources Fig.…”

“…Particle impact modeling, especially SETs generation and propagation through devices, has been studied in several publications [2]- [6]. However, the reliability-performance trade-off limits the scope of those techniques when applied to circuits bigger than a small quantity of transistors [7].…”