2011
DOI: 10.1016/j.apsusc.2010.09.093
|View full text |Cite
|
Sign up to set email alerts
|

Circular and rectangular via holes formed in SiC via using ArF based UV excimer laser

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
3
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
5
1

Relationship

0
6

Authors

Journals

citations
Cited by 10 publications
(3 citation statements)
references
References 26 publications
0
3
0
Order By: Relevance
“…Ablation rate of via holes produced on SiC wafers by a 193 nm ArF excimer laser at 100 Hz was found to increase from 0.1 µm/pulse to 0.18 µm/pulse when the hole diameter was decreased from 70 µm to 10 µm [18]. The authors attributed the increased ablation rate with decreasing hole diameter to the reflected laser light from the side wall of the via hole which is focused on the bottom of the via hole leading to an enhancement of ablation rate [18]. A reduction in ablation rate of polyimide polymers was observed with increasing crater diameter in the fluence range from 2 to 33 J cm −2 at excimer laser wavelength of 248 nm [17].…”
Section: Introductionmentioning
confidence: 92%
See 2 more Smart Citations
“…Ablation rate of via holes produced on SiC wafers by a 193 nm ArF excimer laser at 100 Hz was found to increase from 0.1 µm/pulse to 0.18 µm/pulse when the hole diameter was decreased from 70 µm to 10 µm [18]. The authors attributed the increased ablation rate with decreasing hole diameter to the reflected laser light from the side wall of the via hole which is focused on the bottom of the via hole leading to an enhancement of ablation rate [18]. A reduction in ablation rate of polyimide polymers was observed with increasing crater diameter in the fluence range from 2 to 33 J cm −2 at excimer laser wavelength of 248 nm [17].…”
Section: Introductionmentioning
confidence: 92%
“…Several studies have investigated the influence of spot size on ablation rate for various materials using different laser systems [15,[17][18][19][20]. Ablation rate of via holes produced on SiC wafers by a 193 nm ArF excimer laser at 100 Hz was found to increase from 0.1 µm/pulse to 0.18 µm/pulse when the hole diameter was decreased from 70 µm to 10 µm [18].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation