Circular, narrow beam emission of 1.3-&amp;#x00B5;m surface-emitting laser with monolithically-integrated InP lens for direct fiber coupling

Shinoda, Kazunori; Adachi, K.; Shiota, T.; Kitatani, T.; Fukamachi, T.; Sugawara, Toshiki; Aoki, Masahiro

doi:10.1109/iciprm.2009.5012434

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…This result indicates that the far-field pattern is significantly narrowed by integrating the monolithic lens with the DFB laser. 28) These values of far-field patterns are in good agreement with the calculated value of 4 . Threedimensional far-filed patterns are also evaluated as previously reported in a previous work.…”

Section: Characteristics Of Lens-integrated Devicessupporting

confidence: 87%

Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

Shinoda

Adachi

Lee

et al. 2013

Jpn. J. Appl. Phys.

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Monolithically lens-integrated surface-emitting distributed-feedback (DFB) laser arrays and p–i–n photodiode arrays were developed. A combination of dry etching and wet chemical etching was used to fabricate a monolithic InP lens. The lens profile within ±10 µm from the lens center was estimated to be parabolic shape, which is ideal for the collimation of a Gaussian beam. A fabricated lens-integrated surface-emitting DFB laser exhibited a circular, narrow far-field pattern with full-width at half maximums of 3.9×3.5°. An efficient direct coupling of the lens-integrated DFB laser to a single-mode fiber with a coupling efficiency of -3 dB was confirmed. A four-channel lens-integrated surface-emitting laser array and a lens-integrated p–i–n photodiode array were used to fabricate a very compact 100 Gbps (25 Gbps × 4 channel) optical transceiver with 14×9 mm2 footprint.

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Section: Characteristics Of Lens-integrated Devicessupporting

confidence: 87%

Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

Shinoda

Adachi

Lee

et al. 2013

Jpn. J. Appl. Phys.

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“…After the wafer was thinned, an aspheric lens was fabricated on the bottom side of the InP substrate by etching. The profile of the etched InP lens was estimated to be a highly symmetrical parabolic shape, which is ideal for collimation of a Gaussian beam (13). An anti-reflective coating film was formed on the surface of the monolithic lens.…”

Section: Directly Modulated Dfb Lasermentioning

confidence: 99%

Very-high-bit-rate integrated photonic devices for next-generation Ethernet

Shinoda

Makino

Fukamachi

et al. 2010

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)

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Recent advances in integrated photonic devices for next-generation Ethernet are described. In particular, 1.3-µm-range uncooled photonic devices (namely, electroabsorption modulator integrated lasers, directly modulated lasers, and lens integrated devices) are focused on. A key technology for uncooled operation is an InGaAlAs multiple quantum well (MQW), which produces a strong electron confinement. The electroabsorption modulator integrated lasers, which incorporated an InGaAlAs-MQW absorption layer, exhibit uncooled 25.8-Gbit/s and 43-Gbit/s single-mode fiber 10-km transmissions. The 1.3-µm directly modulated laser, which consists of an InGaAlAs MQW distributed feedback (DFB) active stripe, exhibits uncooled direct modulation at 25 Gbit/s. To improve the optical coupling of the directly modulated laser, we developed a lens-integrated surface-emitting laser, which incorporates an InGaAlAs DFB active stripe. This lens-integrated laser exhibits 25-Gbit/s direct modulation up to 100°C. Furthermore, the lens-integrated photodiode exhibited high speed (35 GHz), high responsivity (0.8 A/W), and large alignment tolerance (26 µm) for direct coupling to a single-mode fiber. These photonic devices have demonstrated their potential for implementation in cost-effective 100-Gbit/s and 40-Gbit/s Ethernet.

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Etching-Free Fabrication and Integration of 45° Micro-Mirror for Surface-Compatible Photonic Packaging

Wakeel,

Hall,

Morrissey

et al. 2024

J. Lightwave Technol.

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Circular, narrow beam emission of 1.3-µm surface-emitting laser with monolithically-integrated InP lens for direct fiber coupling

Cited by 4 publications

References 11 publications

Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

Monolithically Lens-Integrated Photonic Device Arrays for Compact Optical Transceivers

Very-high-bit-rate integrated photonic devices for next-generation Ethernet

Etching-Free Fabrication and Integration of 45° Micro-Mirror for Surface-Compatible Photonic Packaging

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