2006
DOI: 10.1063/1.2236201
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Clarification of Mn–Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy

Abstract: Transition related to the Mn–Zn interaction was observed in photoluminescence (PL) study of the InMnP:Zn epilayer and the peak position blueshifted with increasing Mn concentration. X-ray photoelectron spectroscopy was used to clarify the blueshift of the PL peak. The binding energy shifts of Mn 2p and Zn 2p core levels indicative of the interaction between Mn and Zn were observed. This mutual interaction between Mn 2p and Zn 2p agrees with the result that the Mn-related transition in InMnP:Zn codoped with Zn … Show more

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Cited by 13 publications
(4 citation statements)
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“…The diluted magnetic semiconductor (DMS) has emerged as the most promising candidate for spintronic applications. In the past decade, numerous theoretical and experimental studies on the physical properties of DMSs have been extensively conducted in III–V systems (GaAs, InAs, GaN, and InP). Furthermore, in recent years, spintronic devices such as spin field-effect transistor and spin-polarized light-emitting diode (spin-LED) have been experimentally demonstrated. , Although multiple spin functionalities have been observed, the devices show extremely low efficiency. For spin-LED, the electroluminescence efficiency is low and is strongly affected by the spin-lifetime and excitonic properties.…”
Section: Introductionmentioning
confidence: 99%
“…The diluted magnetic semiconductor (DMS) has emerged as the most promising candidate for spintronic applications. In the past decade, numerous theoretical and experimental studies on the physical properties of DMSs have been extensively conducted in III–V systems (GaAs, InAs, GaN, and InP). Furthermore, in recent years, spintronic devices such as spin field-effect transistor and spin-polarized light-emitting diode (spin-LED) have been experimentally demonstrated. , Although multiple spin functionalities have been observed, the devices show extremely low efficiency. For spin-LED, the electroluminescence efficiency is low and is strongly affected by the spin-lifetime and excitonic properties.…”
Section: Introductionmentioning
confidence: 99%
“…In relation to Mn-related transitions, indeed, we already often observed the transition at $1.2 eV in Mn-implanted n-type InP bulks [7,9] and Mn-doped p-type InP:Zn epilayers [10] in our previous studies. The range of binding energies for the Mn center is from 0.14 to 0.40 eV [11].…”
Section: Resultsmentioning
confidence: 80%
“…We suggest that the absence of abrupt change in the ZFC curves rules out the existence of magnetic clusters [29], which is in line with the previous TEM and XRD analyses. Ferromagnetism observed from bulk and epilayer InMnP partly originated by cluster including Mn oxidation and intrinsic InMnP, which displays low T c [6,24,30,31]. In with the ground-state total angular momentum J=4 and has the properties of ferromagnetic semiconductors, and was found in some bulk GaAs:Mn and InP:Mn samples [33,34].…”
Section: Resultsmentioning
confidence: 99%