Clustered Insulated Gate Bipolar Transistor in the Super Junction Concept: The SJ-TCIGBT

Sweet

Madathil

2018

IET Power Electronics

In the SA-SJ-TCIGBT structure, due to the introduction of a segmented n + -anode, the device can operate in both forward conducting mode and freewheeling diode mode without any snap-back in the current voltage characteristics. In comparison to the SJ-TCIGBT structure, the proposed device shows significant improvement in trade-off relationship between forward voltage drop and switch off energy losses. Simulation results show that 25% decrease in switching energy losses can be achieved. Moreover, the tail current is effectively reduced without any increase in the overshoot voltage. Detailed two dimensional modelling of the structure shows that significant amount of excess electrons are extracted through the shorted-anode structure during turn-off process.

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Snap‐back free shorted‐anode super‐junction TCIGBT

Sweet

Madathil

2018

IET Power Electronics

“…Due to absence of DA, the TCIGBT can be operated with very low power losses at high current densities without associated reliability concerns. Moreover, it was shown that Super-Junction (SJ) concept can further improve the Eoff-Vce(sat) trade-off in TCIGBTs due to the unique PMOS structure, which connects to the p-pillars in the drift region to effectively extract the excess carriers from the bulk during turn-off [6]. Such an option does not exist in IGBTs.…”

Section: Takedownmentioning

confidence: 99%

“…Therefore, the SJ-TCIGBT shows a higher dI/dt in comparison to that of SJ-TIGBT and high switching frequency operation can be realized. In addition, the high surge voltages can be reduced by increasing P-anode doping concentration without significant influence on current tails [6], and the P-anode injection efficiency has no influence on DA [5].…”

Section: A Comparison Of Turn-off Characteristicsmentioning

confidence: 99%

Dynamic Avalanche Free Super Junction-TCIGBT for High Power Density Operation

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Madathil

Nishizawa

et al. 2020

“…The conductivity modulation is significantly enhanced because of thyristor action. Hence, the on-state loss is effectively reduced compared to the IGBT structure [10][11][12]. After the TCIGBT structure turns on, current is continuously controlled by the MOS gate.…”

Section: Recommended For Publication By Associate Editormentioning

confidence: 99%

Numerical Analysis of 3-D Scaling Rules on a 1.2-kV Trench Clustered IGBT

IEEE Trans. Electron Devices

Long

Sweet

et al. 2018

Abstract-3-dimensional scaling rules for the cathode cells and threshold voltages of a 1.2-kV Trench Clustered IGBT (TCIGBT) are investigated using calibrated models in Synopsys Sentaurus TCAD tools. Scaling down results in an enhancement of current gain of the inherent thyristor action which reduces the forward voltage drop even more than that of a scaled Trench IGBT (TIGBT). For identical switching losses, at a scaling factor k=3, the forward voltage drop is reduced by 20% at 300K and 30% at 400K when compared to the conventional TCIGBT (k=1). Most importantly, despite its lower conduction losses than an equivalent TIGBT, a scaled TCIGBT structure can maintain its short circuit capability, due to the additional scaling principle applied to the n-well and p-well regions, maintaining the self-clamping feature. Thus, TCIGBT is a more efficient chip-for-chip, reliable replacement of a TIGBT for energy savings in applications.Index Terms-IGBT, Clustered IGBT, Vce(sat) -Eoff trade-off, power semiconductor device, scaling rule, short circuit capability, self-clamping feature.