CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis

Huang, Yi-Kai; Wang, Pei-Hsun

doi:10.1364/oe.515737

Cited by 3 publications

(1 citation statement)

References 39 publications

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“…However, this time, rather than being fabricated based on a spliced device, the chip was manufactured using 6-inch full-wafer processes. 32 . Figure 3 a,b show the transmission spectra of the waveguide resonators before and after femtosecond laser annealing while the annealing power is set at 0.65, 0.75, and 0.85 W, respectively.…”

Section: Waveguide Resonator Fabrication and Optical Measurementmentioning

confidence: 99%

Refining silicon nitride waveguide quality through femtosecond laser annealing

Wang,

Chen,

Hou

et al. 2024

Sci Rep

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We present a method for modification of silicon nitride (Si3N4) waveguide resonators using femtosecond laser annealing. The quality (Q) factor of the waveguide resonators can be improved by approximately 1.3 times after annealing. Notably, waveguides that originally had a high Q value maintained their quality after the annealing process. However, those with a lower initial Q value experienced a noticeable improvement post-annealing. To characterize the annealing effect, the surface morphologies of Si3N4 films, both pre- and post-annealing, were analyzed using atomic force microscopy. The findings suggest a potential enhancement in surface refinement. Furthermore, Raman spectroscopy confirmed that the Si3N4 film's composition remains largely consistent with its original state within the annealing power range of 0.6–1.6 W. This research underscores the potential of femtosecond laser annealing as an efficient, cost-effective, and localized technique for fabricating low-loss integrated photonics.

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Section: Waveguide Resonator Fabrication and Optical Measurementmentioning

confidence: 99%

Refining silicon nitride waveguide quality through femtosecond laser annealing

Wang,

Chen,

Hou

et al. 2024

Sci Rep

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Damascene Process Development for Low-Loss Photonics Devices with Applications in Frequency Comb

Zhou,

Jin,

Zheng

et al. 2024

Photonics

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Silicon nitride (SiN) is emerging as a material of choice for photonic integrated circuits (PICs) due to its ultralow optical losses, absence of two-photon absorption in telecommunication bands, strong Kerr nonlinearity and high-power handling capability. These properties make SiN particularly well-suited for applications such as delay lines, chip-scale frequency combs and narrow-linewidth lasers, especially when implemented with thick SiN waveguides, which is achieved through low-pressure chemical vapor deposition (LPCVD). However, a significant challenge arises when the LPCVD SiN film thickness exceeds 300 nm on an 8-inch wafer, as this can result in cracking due to high stress. In this work, we successfully develop a damascene process to fabricate 800 nm-thick SiN photonics devices on an 8-inch wafer in a pilot line, overcoming cracking challenges. The resulting 2 × 2 multimode interference (MMI) coupler exhibits low excess loss (−0.1 dB) and imbalance (0.06 dB) at the wavelength of 1310 nm. Furthermore, the dispersion-engineered SiN micro-ring resonator exhibits a quality (Q) factor exceeding 1 × 106, enabling the generation of optical frequency combs. Our demonstration of photonics devices utilizing the photonics damascene process sets the stage for high-volume manufacturing and widespread deployment.

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High-Extinction Photonic Filters by Cascaded Mach–Zehnder Interferometer-Coupled Resonators

Chen,

Ho,

Wang

2024

Photonics

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In this study, we demonstrate high-extinction stop-band photonic filters based on Mach–Zehnder interferometer (MZI)-coupled silicon nitride (Si3N4) resonators fabricated using I-line lithography technology. Leveraging the low-loss silicon nitride waveguide, our approach enables the creation of stable, high-performance filters suitable for applications in quantum and nonlinear photonics. With destructive interference at the feedback loop, photonic filters with an extinction ratio of 35 dB are demonstrated with four cascaded MZI-coupled resonators. This cascading design not only enhances the filter’s extinction but also improves its spectral sharpness, providing a more selective stop-band profile. Experimental results agree well with the theoretical results, showing linear scaling of extinction ratios with the number of cascaded MZI-coupled resonators. The scalability of this architecture opens the possibility for further integration and optimization in complex photonic circuits, where high extinction ratios and precise wavelength selectivity are critical for advanced signal processing and quantum information applications.

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CMOS-compatible 6-inch wafer integration of photonic waveguides and uniformity analysis

Cited by 3 publications

References 39 publications

Refining silicon nitride waveguide quality through femtosecond laser annealing

Refining silicon nitride waveguide quality through femtosecond laser annealing

Damascene Process Development for Low-Loss Photonics Devices with Applications in Frequency Comb

High-Extinction Photonic Filters by Cascaded Mach–Zehnder Interferometer-Coupled Resonators

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