This paper presents the fabrication of a laminated-suspension microwave switch using a conventional 0.6 µm single polysilicon three metals complementary metal-oxide semiconductor process. The post-processing is completed with maskless dry etching. The micromachined microwave switch consists of two electrostatic parallelogram actuators, two T-type connectors and one coplanar waveguide on a p-type silicon substrate. The switch only requires a low dc voltage of around 18 V for electrostatic traction. The testing results of the microwave switch show that the insertion loss is 6.8 dB and isolation is −7.8 dB in the range 10-20 GHz. In addition to demonstrating the design and fabrication of the microwave switch, this paper summarizes the experimental results.