2012
DOI: 10.1007/s00542-012-1439-7
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CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

Abstract: Wafer bonding became during past decade an important technology for MEMS manufacturing and waferlevel 3D integration applications. The increased complexity of the MEMS devices brings new challenges to the processing techniques. In MEMS manufacturing wafer bonding can be used for integration of the electronic components (e.g. CMOS circuitries) with the mechanical (e.g. resonators) or optical components (e.g. waveguides, mirrors) in a single, wafer-level process step. However, wafer bonding with CMOS wafers brin… Show more

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Cited by 34 publications
(19 citation statements)
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“…Thus, fully scalable methods to grow layered 2D insulators have to be further developed. In the case of hBN, this currently involves temperatures above 800°C 150 , which is far above the maximum allowed by the thermal budget of CMOS technologies (about 450°C) for back end of line integration 151 . In contrast, for CaF 2 and some other related insulators fully scalable MBE growth techniques partially exist, while the optimal growth temperatures for a few nanometer thick layers on Si appear more reasonable.…”
Section: Future Development Of 2d Electronicsmentioning
confidence: 99%
“…Thus, fully scalable methods to grow layered 2D insulators have to be further developed. In the case of hBN, this currently involves temperatures above 800°C 150 , which is far above the maximum allowed by the thermal budget of CMOS technologies (about 450°C) for back end of line integration 151 . In contrast, for CaF 2 and some other related insulators fully scalable MBE growth techniques partially exist, while the optimal growth temperatures for a few nanometer thick layers on Si appear more reasonable.…”
Section: Future Development Of 2d Electronicsmentioning
confidence: 99%
“…[79] This makes it very difficult (if not impossible) to collect statistical information. [88] Recently, thermally assisted conversion of metallic films at CMOS back-end compatible temperatures has been demonstrated to yield promising layered films, such as platinum diselenide (PtSe 2 ). [7] CVD can be used to grow high quality graphene, [80] molybdenum disulfide (MoS 2 ), [81] molybdenum diselenide (MoSe 2 ), [82] tungsten disulfide (WS 2 ), [83] tungsten selenide (WSe 2 ), [84] and hexagonal boron nitride (h-BN), [85][86][87] among many others.…”
Section: Fabrication Rs Cells Based On 2d Materialsmentioning
confidence: 99%
“…MEMS resonators have already started to use in various applications from wrist watches to the state of the art communications, due to their extremely features. However developing a MEMS resonator with high quality factor in MHz frequency ranges, which would be compatible with CMOS integrated circuits (Dragoi et al 2012) is very important in view of different applications. In integrated circuits, applications such as filters (Bannon et al 2000;Lopez et al 2009), timing and reference frequency devices (Lin et al 2004;Nguyen 2007), microprocessors (Abdelsalam et al 2010) and sensors such as pressure and humidity sensors (Shi et al 2013;Muniraj 2011) facing an important challenge either from scientific or engineering viewpoint that must be well addressed.…”
mentioning
confidence: 99%