CMOS integrated galvanically isolated RF chip-to-chip communication utilizing lateral resonant coupling

A CMOS Data Transfer System Based on Planar RF Coupling for Reinforced Galvanic Isolation with 25-kV Surge Voltage and 250-kV/µs CMTI

“…Table 3 summarizes the measured performance of the proposed galvanically isolated data transfer system in comparison with the state-of-the-art of galvanic isolators. The comparison is carried out with the best-in-class transformer-based isolator in terms of isolation rating and CMTI [15], as well as with a chip-scale isolator in a standard technology in [24] and package-scale isolators based on stacked or planar coupling [19,25]. The work in [15] achieves a first-rate 20-kV isolation rating and 200-kV/µs CMTI thanks to a dedicated thick polyimide transformer (i.e., 32.5-µm thickness).…”

“…Moreover, the isolator performance is extremely sensitive to chip alignment, which increases the complexity and cost of the solution. The work in [24], which explores lateral coupled resonators with gap silicon oxide isolation, has the advantage of providing more than 4.5-kV galvanic isolation in a standard 0.25-µm BCD technology without any dedicated isolation component (i.e., thick oxide/polyimide capacitors/transformers). Despite the very good data rate and propagation delay performance, it suffers from the highest current per channel, I DD_CH , and high E BIT , as [15] and [19].…”

A Flexible Low-Latency DC-to-4 Gbit/s Link Operating from −40 to +200°C in 28nm CMOS for Galvanically Isolated Applications

“…However, optocouplers suffer from a limited operational temperature range, due to the decrease in output power of the VCSEL/LED and the increase in dark currents in the photodiode at higher temperatures [2]. Other galvanically isolated topologies, such as magnetic and capacitive coupled isolators [1], [3]- [6] overcome the temperature issue but suffer from limited isolation capability, as their link efficiency is greatly dependent on the isolation distance.…”