CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

Probing the effect of point defects on the leakage blocking capability of Al0.1Ga0.9N/Si structures using a monoenergetic positron beam

“…Thus, the major reason of the positron density modulation is the charge re-distribution of atoms near C N . A further localization of positrons near C N occurred for (C N ) 4 . The (S,W) values for C N and (C N ) 4 were calculated, but they were almost identical to (S,W) for DF.…”

“…The charge state of the system was assumed to be neutral. The positron density distribution for (C N ) 4 is not a complete threefold symmetric, which is due to an artifact caused by the orthorhombic supercell used in the simulation and does not influence the 4 . Green, gray, and brown circles correspond to Ga, N, and C, respectively.…”

“…Recent developments in the growth techniques used to obtain GaN layers on Si substrates have triggered a substantial upsurge in research activity and significant progress has therefore been made in this field. [3][4][5][6] The primary motivation for the development of the GaN-onSi technology is its low production cost and the availability of large diameter substrates. In addition, further cost benefits are expected if the devices can be processed using tools in standard fabrication plants for Si-based devices.…”

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

“…In the MMC HEMTs, improvement of the subthreshold slope was observed with narrowing of the mesa-top width. In particular, the MMC HEMT with W top = 50 nm showed a subthreshold slope of 76 mV/dec and a drain-current on/off ratio of 10 8 . Figure 5 structure mitigates the drain-induced electric field effect on the gate controllability of the drain current.…”

“…Indeed, some groups have reported AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) with excellent device performances such as high blocking voltages and low on-state resistances, which are very attractive for high-efficiency power-switching applications [1][2][3][4][5][6][7][8][9][10][11]. In addition, AlGaN/GaN HEMTs have been demonstrated to operate with good switching characteristics and high power conversion efficiencies when used in DC/DC converters and DC/AC inverters [7,[12][13][14].…”