CMOS RF Power Amplifier design for wideband frequency

Gopalrao, More Prachi; Yadav, Alka

doi:10.1109/icacdot.2016.7877723

Cited by 6 publications

(1 citation statement)

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“…To achieve this, an optimal methodology to transmit and receive the RF signals is required. Often, the performance bottleneck to achieving this goal is the transmitting power amplifier (PA) which consumes more energy and is subjected to non-linear operation (Gopalrao and Yadav, 2017). Therefore, as necessary to satisfy the rigid demands of these communication protocols, through methods on improving output power, linearity and efficiency in the integrated design of CMOS PA (Ren et al, 2015).…”

Section: Introductionmentioning

confidence: 99%

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

Gunasegaran

Rajendran

Mariappan

et al. 2021

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Purpose The purpose of this paper is to introduce a new linearization technique known as the passive linearizer technique which does not affect the power added efficiency (PAE) while maintaining a power gain of more than 20 dB for complementary metal oxide semiconductor (CMOS) power amplifier (PA). Design/methodology/approach The linearization mechanism is executed with an aid of a passive linearizer implemented at the gate of the main amplifier to minimize the effect of Cgs capacitance through the generation of opposite phase response at the main amplifier. The inductor-less output matching network presents an almost lossless output matching network which contributes to high gain, PAE and output power. The linearity performance is improved without the penalty of power consumption, power gain and stability. Findings With this topology, the PA delivers more than 20 dB gain for the Bluetooth Low Energy (BLE) Band from 2.4 GHz to 2.5 GHz with a supply headroom of 1.8 V. At the center frequency of 2.45 GHz, the PA exhibits a gain of 23.3 dB with corresponding peak PAE of 40.11% at a maximum output power of 14.3 dBm. At a maximum linear output power of 12.7 dBm, a PAE of 37.3% has been achieved with a peak third order intermodulation product of 28.04 dBm with a power consumption of 50.58 mW. This corresponds to ACLR of – 20 dBc, thus qualifying the PA to operate for BLE operation. Practical implications The proposed technique is able to boost up the efficiency and output power, as well as linearize the PA closer to 1 dB compression point. This reduces the trade-off between linear output power and PAE in CMOS PA design. Originality/value The proposed CMOS PA can be integrated comfortably to a BLE transmitter, allowing it to reduce the transceiver’s overall power consumption.

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Section: Introductionmentioning

confidence: 99%

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

Gunasegaran

Rajendran

Mariappan

et al. 2021

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Integrated Data and Energy Communication Network: A Comprehensive Survey

Yang

Wen

et al. 2018

IEEE Commun. Surv. Tutorials

135

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In order to satisfy the power thirsty of communication devices in the imminent 5G era, wireless charging techniques have attracted much attention both from the academic and industrial communities. Although the inductive coupling and magnetic resonance based charging techniques are indeed capable of supplying energy in a wireless manner, they tend to restrict the freedom of movement. By contrast, RF signals are capable of supplying energy over distances, which are gradually inclining closer to our ultimate goal -charging anytime and anywhere. Furthermore, transmitters capable of emitting RF signals have been widely deployed, such as TV towers, cellular base stations and Wi-Fi access points. This communication infrastructure may indeed be employed also for wireless energy transfer (WET). Therefore, no extra investment in dedicated WET infrastructure is required. However, allowing RF signal based WET may impair the wireless information transfer (WIT) operating in the same spectrum. Hence, it is crucial to coordinate and balance WET and WIT for simultaneous wireless information and power transfer (SWIPT), which evolves to Integrated Data and Energy communication Networks (IDENs). To this end, a ubiquitous IDEN architecture is introduced by summarising its natural heterogeneity and by synthesising a diverse range of integrated WET and WIT scenarios. Then the inherent relationship between WET and WIT is revealed from an information theoretical perspective, which is followed by the critical appraisal of the hardware enabling techniques extracting energy from RF signals. Furthermore, the transceiver design, resource allocation and user scheduling as well as networking aspects are elaborated on. In a nutshell, this treatise can be used as a handbook for researchers and engineers, who are interested in enriching their knowledge base of IDENs and in putting this vision into practice.Index Terms-RF signals, wireless energy transfer (WET), wireless information transfer (WIT), simultaneous wireless information and power transfer (SWIPT), wireless powered communication networks (WPCNs), integrated data and energy communication networks (IDENs).an increasing research interest from both the electronic and communication engineering communities. C. Near-field Wireless Energy TransferAt the time of writing, resonant inductive coupling [35] and magnetic resonance coupling [36] emerge as flexible wireless charging options for electronic devices in the nearfield. Resonant inductive coupling based wireless charging relies on the magnetic coupling that delivers electrical energy between two coils tuned to resonate at the same frequency. This technique has already been commercialised for small electronic appliances [37], such as mobile phones, electric toothbrushes and smart watches etc. However, the coupling coils only support near-field wireless power transfer over a distance spanning from a few millimetres to a few centimetres [38], while achieving a power transfer efficiency as high as 56.7%, when operating at a frequency of 508 kHz [...

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Study of High-Performance RFIC Designs with Efficient PA Architectures for 5G Networks

Punia

Singh

2019

2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT)

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CMOS RF Power Amplifier design for wideband frequency

Cited by 6 publications

References 4 publications

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

A fully matched dual stage CMOS power amplifier with integrated passive linearizer attaining 23 db gain, 40% PAE and 28 DBM OIP3

Integrated Data and Energy Communication Network: A Comprehensive Survey

Study of High-Performance RFIC Designs with Efficient PA Architectures for 5G Networks

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