CMOS-SOI-MEMS Transistor for Uncooled IR Imaging

Voltage and current integrated readout for uncooled passive IR sensors based on CMOS-SOI-NEMS technology

“…Novel thermal sensor based on a suspend in standard CMOS-SOI process and release has been developed at Technion [1,2]. sensing is based on thermally isolated f (TMOS), which senses temperature changes, transistor I-V characteristics.…”

“…In the latter ca applied and the signal voltage is measured w case, DC voltage is applied and the signal cu The paper focuses on comparative perform imagers operated either in voltage or current considers major limiting issues assoc [1,2] its ds on the operation region s well as on its configuration (2 minals with bulk and source In addition, there are parasitic MOS, which are located on the y isolated, machined transistor to assist the reader, the pixel, models for current and voltage ce we are limited here in space, and 3T pixels, and consider only includes two sets of readout easurement time for each row is =250μsec. Accordingly, the ns is 1/(2T int )=2kHz.…”

Uncooled IR sensor based on lateral polysilicon pn junction diode: initial results

“…Over the past few years, a lot of attention has been focused on the uncooled IR imaging systems due to their low cost and small size compared with their cooled counterparts. [1][2][3][4][5][6][7][8][9][10][11][12] Uncooled IR sensors have become the technology of choice for low-cost IR imaging systems used in applications such as thermography, firefighting, driver night vision, security and surveillance. Uncooled IR sensors are thermal infrared sensors that absorb electromagnetic radiation and thus increase their temperature.…”

“…[3][4][5][6][7][8] Because of its simpler fabrication process than pyroelectric IR sensor and better responsivity than thermopile IR sensor, bolometer is the most widely used uncooled IR sensor for imaging. Today, the most common bolometer temperature sensing materials are bi-metallic material, vanadium oxide, amorphous silicon and p-n junction diode.…”

“…Junction diode bolometer use silicon diode or silicon field effect transistor (FET) to detect the temperature rise. [4][5][6][7][8] Since silicon diode and silicon FET are basic component in CMOS technology, the silicon diode bolometer has the best CMOS compatibility. Thus, the ROIC can be easily cointegrated for p-n junction diode bolometer, and diode bolometer has the best potential for mass-production.…”