CMOS technology trends and economics

Wieder, A.W.; Neppl, F.

doi:10.1109/40.149732

Cited by 4 publications

(5 citation statements)

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“…. ) devices [12][13][14][15], (vi) environmental problems due to the microelectronics industry [16,17], (vii) economical problems [18,19], and (viii) the question: 'which physics can be done by using silicon processing and technology? '.…”

Section: Silicon Microelectronics: the Key Of Electronic Systemsmentioning

confidence: 99%

“…Most advanced 'research and development' (R and D) laboratories are close to introducing in pilot lines the 0.25 µm generation [7,18]: Processing of 200 mm diameter Si wafers is being used. Start up of production for 0.25 µm generation is forecasted in the year 1998-1999.…”

Section: State Of the Art And Trendsmentioning

confidence: 99%

“…(vii) economical problems [18,19], and (viii) the question: 'which physics can be done by using silicon processing and technology? '.…”

Section: Silicon Microelectronics: the Key Of Electronic Systemsmentioning

confidence: 99%

“…Most advanced 'research and development' (R and D) laboratories are close to introducing in pilot lines the 0.25 µm generation [7,18]: (i) DRAM (dynamic random access memories) of 256 Mbits, (ii) MOS transistors (MOSFETs) with gate length of 0.25 µm; effective channel length 0.15-0.20 µm, (iii) ICs including over 10 8 transistors and (iv) devices attaining a speed of 100 ps at least.…”

Section: State Of the Art And Trendsmentioning

confidence: 99%

“…The trends are such that, by the year 2001, the 'gigachip' will be a real object [18,23,24]. The 4 gigabits-chip, for example, is a Si IC (i) belonging to the CMOS family with 0.12 µm feature size, (ii) it will have a memory of 4 Gigabit, (iii) it will be able to transmit informations in a rate of about 10 Gbits/s which corresponds to a data processing of about 1 GIPS (giga-instructions per second), (iv) it will include 10 10 MOST (for comparison a human brain has 10 12 neurons), (v) the transistor channel length will be of the order of 70 nm, (vi) its speed will be about 10 ps, and (vii) it will be fabricated on silicon wafers with a diameter of 300 mm.…”

Section: State Of the Art And Trendsmentioning

confidence: 99%

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How will physics be involved in silicon microelectronics

Kamarinos

Felix

1996

J. Phys. D: Appl. Phys.

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By the year 2000 electronics will probably be the basis of the largest industry in the world. Silicon microelectronics will continue to keep a dominant place covering 99% of the 'semiconductor market'. The aim of this review article is to indicate for the next decade the domains in which research work in 'physics' is needed for a technological advance towards increasing speed, complexity and density of silicon ultra large scale integration (ULSI) integrated circuits (ICs). By 'physics' we mean here not only condensed matter physics but also the basic physical chemistry and thermodynamics. The review begins with a brief and general introduction in which we elucidate the current state of the art and the trends in silicon microelectronics. Afterwards we examine the involvement of physics in silicon microelectronics in the two main sections. The first section concerns the processes of fabrication of ICs: lithography, oxidation, diffusion, chemical and physical vapour deposition, rapid thermal processing, etching, interconnections, ultra-clean processing and microcontamination. The second section concerns the electrical operation of the ULSI devices. It defines the integration scales and points out the importance of the intermediate scale of integration which is the scale of the next generation of ICs. The emergence of cryomicroelectronics is also reviewed and an extended paragraph is dedicated to the problem of reliability and ageing of devices and ICs: hot carrier degradation, interdevice coupling and noise are considered. It is shown, during our analysis, that the next generation of silicon ICs needs mainly: (i) 'scientific' fabrication and (ii) microscopic modelling and simulation of the electrical characteristics of the scaled down devices. To attain the above objectives a return to the 'first principles' of physics as well as a recourse to nonlinear and non-equilibrium thermodynamics are mandatory. In the references we list numerous review papers and references of specialized colloquia proceedings so that a more detailed survey of the subject is possible for the reader.

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