1983 International Electron Devices Meeting 1983
DOI: 10.1109/iedm.1983.190433
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CMOS technology using SEG isolation technique

Abstract: An advanced bulk CMOS process has been developed using SEG (Selective Epitaxial Growth) isolation technique and high impurity concentration substrate, in order to suppress latch-up phenomenon. CMOS devices are fabricated on epitiaxial layer, which is selectively grown over p-type silicon substrate surrounded by a 2 p m t h i c k Si02 insulator, using a reduced pressure SiH2C12-H2-HCI system. P-channel devices are formed in an n-well, having 3 pm depth. The gate oxide is 20 nm thick. 400 nm thick phosphorus-dop… Show more

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Cited by 13 publications
(9 citation statements)
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“…For the case of a constant film thickness, Eq. [2] reduces to J, = kg.l (Pg., -Ps.,) i = 1, 2 ..... N [3] where D, kg a -…”
Section: Modified Modelmentioning
confidence: 99%
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“…For the case of a constant film thickness, Eq. [2] reduces to J, = kg.l (Pg., -Ps.,) i = 1, 2 ..... N [3] where D, kg a -…”
Section: Modified Modelmentioning
confidence: 99%
“…Fluorescence of divalent lanthanide-macrocyclic ligand complexes has been extensively studied (1)(2)(3)(4)(5)(6)(7)(8). A divalent europium ion (Eu 2 § has the absorption and emission bands corresponding to 4f-5d transition and gives a wide variety of emission properties according to the extent of the ligand field formed around the concerned ion.…”
Section: Synthesis and Fluorescencementioning
confidence: 99%
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“…Reverse bias on the substrate (or well) raises the bypass current needed to turn on the corresponding bipolar, but using on-chip generators to provide this bias necessitates careful guard de signs to eliminate charge injected by the generator itself [25]. Trench isolation eliminates lateral current flow to and from the well and conceivably could al low a lithographically limited N + / P + spacing [26]- [28]. Present sidewall inversion problems must be solved before diffusions can be butted against trench walls, however.…”
Section: Latchup-free Designmentioning
confidence: 99%
“…Various techniques have been proposed to reduce these narrow-width effects (e.g., see refs. [1][2][3][4], however all add to the overall processing complexity. In this paper we demonstrate that by substituting high pressure oxidation (HIPOX) for the standard atmospheric oxidation (APOX) process, the electrical width reduction can be decreased by 50%, without degrading the device-to-device isolation.…”
mentioning
confidence: 99%