Existing one-dimensional film models for mass-transfer controlled chemical vapor deposition have been extended to predict nonselective epitaxial growth rates of Si on bulk wafers and selective epitaxial growth rates on patterned wafers with low oxide coverage, ~.e., with closely spaced epi surfaces. Using film thickness as the single adjustable parameter, the model predicts reasonably well recently reported high-temperature (-1080~ epitaxial growth data revolving Sill=C12 as the source gas. The quality of model prediction is improved, especially for SIC14 source gas, when total decomposition of the source gas is assumed. Existing experimental data would be much more useful for modeling purposes if measurements were reported of gas composition and temperature above the silicon surface, while deposition is occurring. Such data are also essential to develop a general model that reduces to surface reaction control at low temperatures and to masstransfer control at high temperatures.