CNTFET: The emerging post-CMOS device

Sinha, Sanjeet Kumar; Kumar, K. Ashok; Chaudhury, Saurabh

doi:10.1109/icspcom.2013.6719815

Cited by 17 publications

(2 citation statements)

References 12 publications

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“…Such formed CNTs may have metallic or semiconducting behavior, depending on the rolling method of graphene sheets. CNTFETs are fabricated with the semiconductor nature of CNTs to complete channel formation [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application

Mathur,

Birla

2024

Eng. Res. Express

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The selection of the title includes designing of SRAM cell using CNTFET because CNTFET overcomes all the issues coming from CMOS technology beyond the 10nm technology node. With the reduction in channel length, the threshold voltage required for CMOS-based technology increases, and the corresponding off-state current decreases. This can prove to be a significant advancement for the semiconductor industry. With the evolution of the new generation of the technology era, especially beyond 10nm, CMOS is not able to fulfil all the required conditions, as beyond 10nm technology node, threshold voltage decreases, and consequently off-state current and leakage power increase. This is the reason that CNTFET can be considered a prominent replacement of CMOS transistor for the designing of SRAM cells with the technology node beyond 10nm. This designed SRAM cell is applicable for IoT applications because IoT uses a microcontroller and the SRAM cell is used as a data memory in the microcontroller. A Data memory always requires high speed, ultra-low power dissipation, and high stability from the cell. Thus, to fulfil this requirement, performance analysis to identify the problem statement of conventional cells and then to improve their performance based on the findings is essential. This is the reason that the 7T CNTFET-based SRAM novel cell is introduced, and its performance is going to be further improved so that the designed novel cell becomes compatible with IoT applications. Leakage power and stability factor are the main performance parameters to improve of SRAM cells.

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Section: Introductionmentioning

confidence: 99%

Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application

Mathur,

Birla

2024

Eng. Res. Express

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“…Multi-valued logic, which has been extensively investigated by researchers, has some advantages including less complexity, less connections on chip, and less power consumption due to the fact that more information can be transferred and stored over the fixed memory. 1,2 Implementing circuits in quaternary logic requires fewer gates and communication channels than binary logic 3 which can reduce the chip size and internal communications, and increase circuits efficiency. 4 The quaternary logic can be implemented with four different logic values, i.e.…”

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confidence: 99%

A New Quaternary Full Adder Cell based on CNFET for Use in Fast Arithmetic Circuits

Bolourforoush¹,

Ghanatghestani²

2022

ECS J. Solid State Sci. Technol.

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Multi-valued logic potentially increases the efficiency of arithmetic circuits and digital ‎signal processing. Quaternary logic can be suggested as a solution to the problem of power ‎consumption and connection complexity in binary digital systems. The possibility of having ‎several threshold voltage levels using the carbon nanotube field-effect transistor ‎results in the widespread use of this technology in the design of multi-valued circuits. Here, a quaternary full adder cell is proposed. The main goal of the proposed circuit ‎is to reduce the critical delay path in the quaternary full adder circuit using a parallel ‎design. The proposed circuit is compared with four quaternary full adders based on ‎simulation results using HSPICE in 32 nm technology. The experimental results show the ‎higher performance of the proposed quaternary full adder cell than the state-of-the-art ‎designs.‎

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Phase Frequency Detector Using CNTFET

Tomar

Parekh

2022

Sustainable Technology and Advanced Computing in Electrical Engineering

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CNTFET: The emerging post-CMOS device

Cited by 17 publications

References 12 publications

Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application

Designing and performance analysis of 7 T CNTFET based novel SRAM cell for IoT application

A New Quaternary Full Adder Cell based on CNFET for Use in Fast Arithmetic Circuits

Phase Frequency Detector Using CNTFET

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