2016
DOI: 10.1016/j.scriptamat.2016.01.027
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Co-doping of Al and Bi to control the transport properties for improving thermoelectric performance of Mg2Si

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Cited by 21 publications
(10 citation statements)
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“…The case of Al diffusion into n-type Mg 2 (Si,Sn) was already discussed in a previous work, where no gradient was found after contacting with non-coated Al foils [30], similarly to the first results in this work (see line scans in SI). It also appears that Al is a poor dopant for this material system as shown in [49][50][51][52][53]. It is, therefore, unlikely that the diffusion of Al into the n-type TE material is at the origin of the change in carrier concentration.…”
Section: Discussionmentioning
confidence: 92%
“…The case of Al diffusion into n-type Mg 2 (Si,Sn) was already discussed in a previous work, where no gradient was found after contacting with non-coated Al foils [30], similarly to the first results in this work (see line scans in SI). It also appears that Al is a poor dopant for this material system as shown in [49][50][51][52][53]. It is, therefore, unlikely that the diffusion of Al into the n-type TE material is at the origin of the change in carrier concentration.…”
Section: Discussionmentioning
confidence: 92%
“…Mg 2 Si-based compounds have further advantages for ATEGs such as non-toxicity, low density, and low cost. Hence, several investigations have focused on the improvement in the ZT of Mg 2 Si by doping the Si-sites (with Bi or Sb) and Mg-sites (with Al), using Mg 2 Sn and Mg 2 Ge solid solutions, and introducing nanophases [1][2][3][4][5][6][7]. As a result, the maximum ZT of the Mg 2 Si was determined to be ~ 1.2 at 770 K on a lab scale [8].…”
Section: Introductionmentioning
confidence: 99%
“…Several doping elements have been examined for increasing the figure of merit of Mg 2 Si. Bismuth, for instance, can increase the electrical conductivity and reduce thermal conductivity of Mg 2 Si. It has been shown that aluminum can increase the solubility of bismuth in silicon sites of Mg 2 Si , and increase the figure of merit of magnesium silicide to 0.9 at 900 K. However, the doping efficiency is reduced by the formation of Bi 2 Mg 3 due to a magnesium excess, which is typically added to compensate for magnesium evaporation when the synthesis and/or sintering temperature is above 900 K . By suppressing magnesium evaporation, extra magnesium would no longer be needed.…”
Section: Introductionmentioning
confidence: 99%