Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr

Farley, C. W.; Kim, T. S.; Streetman, B. G.

doi:10.1007/bf02667794

Cited by 26 publications

(5 citation statements)

References 18 publications

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“…Makita et al (21) concluded it was donor related based upon studies of donor implants into MBE GaAs epilayers. Farley et al (18), from coimplantation experiments with Si-implanted semi-insulating GaAs:Cr wafers, argued it was due to a SiAs-VA~ complex, in agreement with Yin and Wittey (28) who performed thermal conversion experiments on semi-insulating GaAs:Cr. Dansas and Chartec (27) ascribed it to Mnca acceptor transitions in their studies of Si + implantation into LEC GaAs substrates.…”

Section: Surface Morphology and Surface Conversion--any An-supporting

confidence: 72%

“…Maintaining a concentration of As at the surface forces Si to take a Ga site, resulting in a higher activation percentage for a given temperature. Farley et al (18) have noted that coimplantation of P (replacing As) will produce similar results. Although they have not reduced the As lost, they have replaced it with a similar species and demonstrated thai minimizing the self-compensation process will result in higher activation.…”

Section: Surface Morphology and Surface Conversion--any An-mentioning

confidence: 90%

“…Three different explanations (18,26,27) have been offered to account for the 880 nm line in ion implanted GaAs. Makita et al (21) concluded it was donor related based upon studies of donor implants into MBE GaAs epilayers.…”

Section: Surface Morphology and Surface Conversion--any An-mentioning

confidence: 99%

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Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Armiento¹,

Lehman²,

Prince³

et al. 1987

J. Electrochem. Soc.

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3. By ion implantation, the reflectivity of the wafer in the infrared region increases, but it decreases to a level below that of the substrate as the impurities are activated by annealing. Therefore the absorption of infrared rays increases and the heating rate becomes faster than that after ion implantation.4. Previously, the difference of the heating rate due to impurity concentration was reported, but now a similar effect is found in ion-implanted layers. ABSTRACTA new approach for capless rapid thermal annealing of ion implanted III-V semiconductors, the enhanced overpressure proximity (EOP) technique, has been developed and applied to GaAs implanted with Si +. The EOP method relies on the use of an Sn-coated GaAs wafer to provide a greater localized arsenic overpressure than can be achieved by the conventional proximity method which utilizes a GaAs wafer. Implant doses of 7 • 10 '~ and 1 • 10 '4 cm 2 havebeen investigated, yielding activations as high as 60 and 35%, respectively. Under the appropriate annealing conditions photoluminescence data confirm that EOP-RTA reduces the concentration of Si on As sites when compared with the conventional proximity approach. In addition, this technique permits an increased latitude in annealing times and temperatures that can be used without degradation of the wafer surface. The EOP approach can be easily extended for capless rapid thermal annealing of other implanted dopants in GaAs as well as other III-V compounds such as InP and InGaAs.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-06-07 to IP Vol. 134,No. 8

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Section: Surface Morphology and Surface Conversion--any An-supporting

confidence: 72%

Section: Surface Morphology and Surface Conversion--any An-mentioning

confidence: 90%

See 1 more Smart Citation

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Armiento¹,

Lehman²,

Prince³

et al. 1987

J. Electrochem. Soc.

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“…Co-implantation of elements of column V (P or As) has been reported to increase the Si activation in GaAs (35,36). Therefore, different channeling tails can form across the wafer which can cause corresponding nonuniformities in the threshhold voltage on the wafer.…”

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confidence: 99%

Ion implantation in Gallium Arsenide MESFET technology

Souza

Sadana

1990

SPIE Proceedings

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This review emphasizes controlled shallow doping of GaAs by ion implantation and its limitations to the stae of-art GaAs IC technology. It discusses the electrical activation behavior of implanted silicon in GaAs upon subsequent capless or silicon nitride capped rapid thermal annealing (RTA). It is demonstrated that atomic U diffuses into the implanted region of GaAs during PECVD of a Si3N4 cap and the II retards the electrical activation kinetics of the implanted Si. Applications of ion implantation to achieve buried-p layers as well as isolation between neighboring devices in GaAs are also briefly discussed. I . IntroductionThe technology of digital GaAs IC circuits has undergone a rapid advancement in recent years. The use of GaAs substrates for ICs offers several advantages over Si substrates; specifically in the area where very high frequency digital and analogic circuit operations are required. Furthermore, GaAs circuits are suited lbr optoelectronic applications. Due to its inherent radiation hardness, GaAs devices are being used actively for space and military research (1-3). The differences in devices and their performances based on Si and GaAs arise from the differences in the physical properties of the two materials. For example, unlike Si, GaAs is a direct band-gap material and the latter can be grown with semi-insulating bulk conductivity. With recent advances in ciystal growth technology 4 inch diameter semi-insulating GaAs wafers with dislocation densities of < l0 crn2 can be commercially obtained. Similarly, the availability of improved dry etching, plasma enhanced chemical vapor (ICposition (PECVI)), submicron optical lithography and rapid thermal annealing equipment has made the fahilcation of advanced digital GaAs IC simpler. It has been demonstrated recently by IBM workers that data transfer between two neighoring computers can he transferred at a I Ghit/s rate (4) using GaAs MESFlT based technology. In a MESFET, the electrical conduction between the source and drain is modulated by a bias applied to the gate. The gate to channel isolation is provided by the Schottky barrier formed by the metal-semiconductor June-SPIE Vol. 1405 Fifth Congress of the Brazilian Society ofMicroelectronics (1990) / 95 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/26/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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“…12,[30][31][32][33] This same idea was applied to amphoteric dopant species with the thought that Si or Ge could be made more n-type in GaAs or InP by the implantation of As or P to promote creation of group III vacancies to increase occupation of group III sites with Si resulting in donors. [13][14][15][16]18,20,21,[34][35][36] The addition of group V species in the case of co-implantation with amphoteric dopants was also anticipated to reduce the propensity of group IV to occupy group V sites or the formation of IV-IV next nearest neighbor pairs and limit electrical activation.…”

Section: Discussionmentioning

confidence: 99%

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

Lind

Aldridge

Jones

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Elevated temperature, nonamorphizing implants of Si þ , and a second co-implant of either Al þ , P þ , or S þ at varying doses were performed into In 0.53 Ga 0.47 As to observe the effect that individual co-implant species had on the activation and diffusion of Si doping after postimplantation annealing. It was found that Al, P, and S co-implantation all resulted in a common activation limit of 1.7 Â 10 19 cm À3 for annealing treatments that resulted in Si profile motion. This is the same activation level observed for Si þ implants alone. The results of this work indicate that co-implantation of group V or VI species is an ineffective means for increasing donor activation of n-type dopants above 1.7 Â 10 19 cm À3 in InGaAs. The S þ co-implants did not show an additive effect in the total doping despite exhibiting significant activation when implanted alone. The observed n-type active carrier concentration limits appear to be the result of a crystalline thermodynamic limit rather than dopant specific limits. V

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Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr

Cited by 26 publications

References 18 publications

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method

Ion implantation in Gallium Arsenide MESFET technology

Co-implantation of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As

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