Cobalt induced nanocrystals on Ge(001)

Mocking, Tijs F.; Hlawacek, Gregor; Zandvliet, Henricus J.W.

doi:10.1016/j.susc.2012.02.007

Cited by 15 publications

(12 citation statements)

References 36 publications

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“…Although the relative mass of the elements in the adlayers and the underlying bulk are important, this effect works for any combination of bulk and adlayer elements. 101 In particular, it works for light elements on a heavy substrate. 99,100 E. Voltage contrast Similar to SEM, local electromagnetic fields in the sample will influence the yield, angular distribution, and energy of the generated SE.…”

Section: Imaging Of Thin and Soft Layersmentioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

213

155

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Helium ion microcopy based on gas field ion sources represents a new ultrahigh resolution microscopy and nanofabrication technique. It is an enabling technology that not only provides imagery of conducting as well as uncoated insulating nanostructures but also allows to create these features. The latter can be achieved using resists or material removal due to sputtering. The close to free-form sculpting of structures over several length scales has been made possible by the extension of the method to other gases such as neon. A brief introduction of the underlying physics as well as a broad review of the applicability of the method is presented in this review.

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Section: Imaging Of Thin and Soft Layersmentioning

confidence: 99%

Helium ion microscopy

Hlawacek

Veligura

Gastel

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

213

155

View full text Add to dashboard Cite

show abstract

“…As a third example of the same contrast mechanism, we present selected results of a study dealing with the growth of Co islands on Ge{001} [ 10 ]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…During evaporation the sample was kept at room temperature. Afterwards it was annealed at 600 K for 8 min and for a shorter period of 4 min at 700 K. Before insertion into the HIM the sample was briefly exposed to air during which time a thin oxide layer most likely formed [ 10 ].…”

Section: Methodsmentioning

confidence: 99%

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

Hlawacek¹,

Veligura²,

Lorbek³

et al. 2012

Beilstein J. Nanotechnol.

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Summary Background: Helium ion microscopy is a new high-performance alternative to classical scanning electron microscopy. It provides superior resolution and high surface sensitivity by using secondary electrons. Results: We report on a new contrast mechanism that extends the high surface sensitivity that is usually achieved in secondary electron images, to backscattered helium images. We demonstrate how thin organic and inorganic layers as well as self-assembled monolayers can be visualized on heavier element substrates by changes in the backscatter yield. Thin layers of light elements on heavy substrates should have a negligible direct influence on backscatter yields. However, using simple geometric calculations of the opaque crystal fraction, the contrast that is observed in the images can be interpreted in terms of changes in the channeling probability. Conclusion: The suppression of ion channeling into crystalline matter by adsorbed thin films provides a new contrast mechanism for HIM. This dechanneling contrast is particularly well suited for the visualization of ultrathin layers of light elements on heavier substrates. Our results also highlight the importance of proper vacuum conditions for channeling-based experimental methods.

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“…In search for appropriate materials for electric contacts the interaction of transition metals (TMs) deposited onto germanium surface has been extensively studied [10][11][12][13][14][15][16][17]. It has been reported that Ni films deposited onto Ge surface form a variety of Ni x Ge y phases upon annealing [18,19].…”

Section: Introductionmentioning

confidence: 99%

Thermal evolution of the morphology of Ni/Ge(111)-c(2 × 8) surface

Tomaszewska¹,

Huang

et al. 2014

Materials Science-Poland

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The thermal evolution of the interface formed by room temperature (RT) deposition of Ni atoms (coverage 0.1, 0.5, 1.2 ML) onto a Ge(111)-c(2 × 8) surface has been studied with the use of scanning tunneling microscopy (STM). Atomically resolved STM images revealed that, at RT, the boundaries between the different c(2 × 8) domains acted as nucleation sites for Ni atoms. After annealing the surface with deposited material at 473 to 673 K the formation of nano-sized islands of Ni x Ge y compounds was observed. In addition, the occurrence of ring-like structures was recorded. Based on the dual-polarity images the latter were assigned to Ni atoms adsorbed on Ge adatoms.

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Cobalt induced nanocrystals on Ge(001)

Cited by 15 publications

References 36 publications

Helium ion microscopy

Helium ion microscopy

Imaging ultra thin layers with helium ion microscopy: Utilizing the channeling contrast mechanism

Thermal evolution of the morphology of Ni/Ge(111)-c(2 × 8) surface

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