Coefficient of thermal expansion (CTE) in EUV lithography: LER and adhesion improvement

Higgins, Craig; Settens, Charles; Wolfe, P. G.; Petrillo, Karen; Auger, Robert; Matyi, R. J.; Brainard, Robert L.

doi:10.1117/12.879509

Cited by 7 publications

(1 citation statement)

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“…For example, it was recently observed that resist sidewalls after development exhibit anisotropy in the form of perpendicular-to-line-direction striations George et al ., 2010). Furthermore, systematic investigations of organic and inorganic underlayers in EUV resists revealed the critical role of the coeffi cient of thermal expansion (CTE): low CTE underlayers exhibit better adhesion and consequently LER in thin fi lm EUV resists (Higgins et al ., 2011). It is noteworthy that none of the proposed analytic or numerical models for LER formation can capture the formation of post-lithographic striations probably since they ignore the resist-substrate effects.…”

Section: Resist-substrate Interactionsmentioning

confidence: 99%

Sidewall roughness in nanolithography: origins, metrology and device effects

2014

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Section: Resist-substrate Interactionsmentioning

confidence: 99%

Sidewall roughness in nanolithography: origins, metrology and device effects

2014

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Polymerizable Nonionic Perfluorinated Photoacid Generators for High‐Resolution Lithography

Liu,

Wang,

Wang

et al. 2024

Small Methods

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Advanced photoresists must satisfy stringent sensitivity requirements while maintaining the ability to print ever‐shrinking critical dimensions. However, the unavoidable acid diffusion associated with chemically amplified photoresists has led to a trade‐off between resolution, line‐edge roughness, and sensitivity, which presents a significant challenge for high‐resolution lithography. To address this issue, a novel class of alkene‐functionalized nonionic perfluorinated photoacid generators (PAGs) is developed. These fluorine‐rich compounds significantly enhance the photochemical reactivity due to the introduction of abundant F‐elements, thereby improving sensitivity. Upon irradiation by ultraviolet light or electrons, they generate long‐chain perfluorinated sulfonic acids with large sizes and minimal diffusion ranges, effectively suppressing acid diffusion. Furthermore, by employing these polymerizable PAG monomers, PAG‐bound polymers are synthesized that are likely to achieve higher resolution by minimizing acid diffusion. Lithography performance demonstrated patterning of sub‐45 nm lines at an electron beam dose of 29 µC cm−2. Overall, the developed perfluorinated PAGs and PAG‐bound polymer photoresists are promising candidates for achieving high‐sensitivity and high‐resolution nano‐patterning.

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