2020
DOI: 10.1103/physrevlett.124.223601
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Coherent Control of Nitrogen-Vacancy Center Spins in Silicon Carbide at Room Temperature

Abstract: Solid-state color centers with manipulable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which the telecomwavelength emission is detected. Through carefully optimizing the implanted conditions, we improve the concentration of NV centers for about 4 times. Based on this, the coherent control of NV center spins is … Show more

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Cited by 128 publications
(108 citation statements)
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“…The deployment of fiber-based quantum networks would benefit from a presence of telecommunications range quantum emitters. While Si vacancy and divacancy in 4H-SiC provide longer operating wavelengths than diamond defects and QDs, emerging SiC color centers, such as the NV [128,129] and the vanadium center [130], are currently explored in the range 1300-1550 nm.…”
Section: Current and Future Challengesmentioning
confidence: 99%
“…The deployment of fiber-based quantum networks would benefit from a presence of telecommunications range quantum emitters. While Si vacancy and divacancy in 4H-SiC provide longer operating wavelengths than diamond defects and QDs, emerging SiC color centers, such as the NV [128,129] and the vanadium center [130], are currently explored in the range 1300-1550 nm.…”
Section: Current and Future Challengesmentioning
confidence: 99%
“…It can further realize the directly magnetic eld image of the sample using a CMOS camera detector 8 . The 4H-SiC micrometer particle with V Si defects 41 and other types of spin qubit including divacancy 15,16,42 , NV center [24][25][26] and even transition metal ions 43 in 4H, 6H…”
Section: Discussionmentioning
confidence: 99%
“…SiC is a widely used semiconductor due to its unique properties, such as mature inch-scale growth and micro-nano fabrication [15][16][17] . In recent years, several spin qubits and bright single-photon-emitters in SiC attracted great attentions in the quantum community [15][16][17][18][19][20][21][22][23][24][25][26] .…”
Section: Introductionmentioning
confidence: 99%
“…A good spatial positioning of the color centers is important for better integration with photonic structures, but the implantation and irradiation methods lack such a control. To improve lateral positioning, lithographically patterned resist has been used to implant SiC with NV − centers 131 and silicon vacancies 132 at defined positions. Focused ion beam (FIB) has also been employed to implant silicon vacancies in diamond nanostructures 133 and 4H‐SiC with tens of nanometers of position accuracy 134 .…”
Section: Future Fundamental Explorationsmentioning
confidence: 99%