Coherent manipulation of a strongly driven semiconductor quantum well

Paspalakis, Emmanuel; Tsaousidou, M.; Terzis, Andreas

doi:10.1103/physrevb.73.125344

Cited by 83 publications

(42 citation statements)

References 34 publications

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“…In addition, we choose T 1 = 100ps and T 2 = 10ps as in Ref. [13]. In what follows, we assume that the system is initially in the lowest subband, so the initial conditions are S 1 (0) = S 2 (0) = 0, and the population difference is S 3 (0) = −1.…”

Section: Self-induced Transmission On Intersubband Resonancementioning

confidence: 99%

“…Nevertheless, combining with the nonlinear parameters γ and β , we define an effective area of input pulse according to Ref. [13]:…”

Section: Self-induced Transmission On Intersubband Resonancementioning

confidence: 99%

“…Later, by using the effective nonlinear Bloch equations, Paspalakis et al [13,14] studied the electron dynamics and presented the conditions leading to complete population inversion and complete Rabi oscillations.…”

Section: Introductionmentioning

confidence: 99%

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Nonlinear pulse propagation in an intersubband resonance multiple quantum wells

Ni¹,

Gong²,

Vainos³

et al. 2010

AIP Conference Proceedings

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Section: Self-induced Transmission On Intersubband Resonancementioning

confidence: 99%

“…Nevertheless, combining with the nonlinear parameters γ and β , we define an effective area of input pulse according to Ref. [13]:…”

Section: Self-induced Transmission On Intersubband Resonancementioning

confidence: 99%

See 1 more Smart Citation

Nonlinear pulse propagation in an intersubband resonance multiple quantum wells

Ni¹,

Gong²,

Vainos³

et al. 2010

AIP Conference Proceedings

Self Cite

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show abstract

“…In recent years, Rabi flopping and coherent propagation of ultrashort electromagnetic pulses have been studied both theoretically and experimentally when intersubband transitions of semiconductor quantum wells interact with electromagnetic fields [1,2,3,4,5,6,7,8,9]. In some of these studies the Rabi flopping [2,3,8] and the coherent propagation of ultrashort far-infrared electromagnetic pulses [4,5,7] that interact with a two-subband system in a symmetric semiconductor quantum well structure, taking into account the effects of electronelectron interactions, have been presented.…”

Section: Introductionmentioning

confidence: 99%

“…In some of these studies the Rabi flopping [2,3,8] and the coherent propagation of ultrashort far-infrared electromagnetic pulses [4,5,7] that interact with a two-subband system in a symmetric semiconductor quantum well structure, taking into account the effects of electronelectron interactions, have been presented. All these studies have shown that at certain electron densities the electron-electron interactions make the intersubband transitions to behave quite differently from atomic transitions.…”

Section: Introductionmentioning

confidence: 99%

Ultrashort Pulse Interaction with Intersubband Transitions of Semiconductor Quantum Wells

Katsantonis

Σταθάτος

Paspalakis

2015

J. Phys.: Conf. Ser.

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Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

Jirauschek

Riesch

Tzenov

2019

Advcd Theory and Sims

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Due to their intuitiveness, flexibility, and relative numerical efficiency, the macroscopic Maxwell-Bloch (MB) equations are a widely used semiclassical and semi-phenomenological model to describe optical propagation and coherent light-matter interaction in media consisting of discrete-level quantum systems. This review focuses on the application of this model to advanced optoelectronic devices, such as quantum cascade and quantum dot lasers. The Bloch equations are here treated as a density matrix model for driven quantum systems with two or multiple discrete energy levels, where dissipation is included by Lindblad terms. Furthermore, the 1D MB equations for semiconductor waveguide structures and optical fibers are rigorously derived. Special analytical solutions and suitable numerical methods are presented. Due to the importance of the MB equations in computational electrodynamics, an emphasis is placed on the comparison of different numerical schemes, both with and without the rotating wave approximation. The implementation of additional effects which can become relevant in semiconductor structures, such as spatial hole burning, inhomogeneous broadening, and local-field corrections, is discussed. Finally, links to microscopic models and suitable extensions of the Lindblad formalism are briefly addressed. of a lower bandgap material than the adjacent layers, which restricts the free electron motion in that layer to the in-plane directions and gives rise to quantized energy states in growth direction. As a consequence of the further restriction of the energy spectrum and the even stronger carrier localization, additional improvement can be expected from 2D or 3D confinement, resulting in quantum wire/dash and quantum dot (QD) structures, respectively. Indeed, QD [1][2][3] and quantum dash [4] lasers and laser amplifiers have been shown to exhibit excellent characteristics. In Figure 1, the formation of quantized states in quantum wells, wires, and dots is schematically illustrated. The term quantum dash refers to an elongated nanostructure, that is, some kind of short quantum wire. By contrast, the term nanowire does not necessarily indicate strong quantum confinement. For example, in nanowire lasers, the nanowire geometry typically serves as a single-mode optical waveguide resonator, while the active region is based on a heterostructure or quantum well, as in a conventional laser diode. [5,6] Semiconductor optoelectronic devices usually rely on electron-hole recombination, that is, optical transitions between conduction and valence band states. The associated resonance wavelength is largely determined by the semiconductor bandgap, which establishes a lower bound on the transition energy. Thus, the coverage of a certain spectral region depends on the existence of suitable semiconductor materials, which for example restricts the availability of practical optoelectronic sources and detectors in the mid-infrared and terahertz regions. An alternative concept is based on intersubband devices, which employ so-called i...

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Coherent manipulation of a strongly driven semiconductor quantum well

Cited by 83 publications

References 34 publications

Nonlinear pulse propagation in an intersubband resonance multiple quantum wells

Nonlinear pulse propagation in an intersubband resonance multiple quantum wells

Ultrashort Pulse Interaction with Intersubband Transitions of Semiconductor Quantum Wells

Optoelectronic Device Simulations Based on Macroscopic Maxwell–Bloch Equations

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