Electron-phonon coupling of a two-dimensional electron gas in a Si metal-oxide-semiconductor field-effect transistor in the temperature range 0.3 KϽTϽ4 K has been investigated using phonon-drag thermopower S g and electron energy loss rate F(T). At low temperatures ͑the Bloch limit͒ we find S g ϰT 6 , as expected for electron-phonon scattering mediated by a screened deformation potential, and the magnitude is in excellent agreement with a calculation using no adjustable parameters; the calculation continues to give good agreement at higher temperatures. F(T) has been calculated using the same input parameters as for S g . Reasonably good agreement is found with the observed values for TϾ1.5 K, but at lower temperatures the measured F(T) is much larger than predicted and also exhibits a much weaker temperature dependence. Possible reasons are suggested. ͓S0163-1829͑97͒05143-6͔

No abstract

No abstract