2019
DOI: 10.4218/etrij.2018-0171
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Collective laser‐assisted bonding process for 3D TSV integration with NCP

Abstract: Laser‐assisted bonding (LAB) is an advanced technology in which a homogenized laser beam is selectively applied to a chip. Previous researches have demonstrated the feasibility of using a single‐tier LAB process for 3D through‐silicon via (TSV) integration with nonconductive paste (NCP), where each TSV die is bonded one at a time. A collective LAB process, where several TSV dies can be stacked simultaneously, is developed to improve the productivity while maintaining the reliability of the solder joints. A sin… Show more

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Cited by 19 publications
(5 citation statements)
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“…Through the optimization process, we finally applied a laser power of 160 W and laser irradiation time of 2 s. The size of the irradiated laser beam was equal to that of the substrate (225 mm 2 ); therefore, the laser power density was 0.71 W/mm 2 . We assumed that the silicon chip was 70 mm thick and had an absorption coefficient of 29.4% [ 24 ]. The area of the silicon chip was 49 mm 2 .…”
Section: Methodsmentioning
confidence: 99%
“…Through the optimization process, we finally applied a laser power of 160 W and laser irradiation time of 2 s. The size of the irradiated laser beam was equal to that of the substrate (225 mm 2 ); therefore, the laser power density was 0.71 W/mm 2 . We assumed that the silicon chip was 70 mm thick and had an absorption coefficient of 29.4% [ 24 ]. The area of the silicon chip was 49 mm 2 .…”
Section: Methodsmentioning
confidence: 99%
“…The contrast rate obtained on real PIC sample pictures confirm that the proposed IR microscope works for the test scenarios. The ability of vision through several layers of silicon is highly beneficial for 2.5D and 3D integration processes and bonding quality inspection [4], [28] - [29].…”
Section: Ir Microscope Optical Designmentioning
confidence: 99%
“…In case there are several peaks resulting from the analysis, the object of interest should be chosen manually. The ability of switching between several peaks for changing the best in-focus point between different layers of the stack is beneficial for 2.5D and 3D photonic integration processes and bonding quality inspection [4], [28] - [29]. This approach also could be used for estimating of the layer thickness in multi-layer silicon structure with resolution limited only by stage minimum travelling step.…”
Section: Tcpmt-2022-353mentioning
confidence: 99%
“…LAB is a semiconductor packaging process in which a laser beam is selectively applied to a target flip-chip die and/or surface-mount component for less than a couple of seconds. [15][16][17][18][19][20] The interaction between the laser beam and the target device increases its temperature, thus allowing it to be metallurgically bonded to a substrate, interposer, or another die. The LAB system (Fig.…”
Section: Laser-assisted Bondingmentioning
confidence: 99%