Collector optimization in advanced SiGe HBT technologies

Liu, Q.Z.; Orner, B.; Lanzerotti, L.; Dahlstrom, M.; Hodge, W.; Gordon, Michael S.; Johnson, J. B.; Gautsch, M.; Greco, J.; Rascoe, J.; Ahlgren, D.; Joseph, A.J.; Dunn, J.

doi:10.1109/csics.2005.1531779

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…Reducing the collector resistance can improve the f T because it reduces the charging and discharging time of the collector-base capacitance (C CB ) [30]. The measurement results shown in Fig.…”

Section: A Reduction Of Collector Resistancementioning

confidence: 99%

SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

Hashimoto

Tokunaga

Fukumoto

et al. 2014

IEEE J. Electron Devices Soc.

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A self-aligned SiGe HBT technology achieving a cutoff frequency (f T ) of 253 GHz was developed using a selective SiGe epitaxial growth process. Germanium concentration in an i-SiGe layer just under a p + intrinsic base region was raised to 27.4% to improve f T , and boron concentration in the intrinsic base region reached 2.4 × 10 20 cm −3 as a deposition to maintain a breakdown voltage of 1.5 V. A 0.13-μm SiGe BiCMOS technology geometrically advanced from an earlier 0.18-μm version shrinks the emitter width from 0.2 to 0.12 μm to reduce collector-base capacitance and base resistance. It achieves a maximum oscillation frequency (f MAX ) of 325 GHz. This technology can be applied to optical and mm wave communication systems.

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Section: A Reduction Of Collector Resistancementioning

confidence: 99%

SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

Hashimoto

Tokunaga

Fukumoto

et al. 2014

IEEE J. Electron Devices Soc.

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A Simulation Study of Oxide Thickness Effect on the Performance of SiGe HBTs with SOI Structure

Liao

Wang

Chang

et al. 2007

2007 IEEE Conference on Electron Devices and Solid-State Circuits

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Using a TCAD simulator, we we know, little work on the effect of different BOX examine the oxide thickness effect on electrical thickness to the performance of the device has been characteristics of the SiGe HBT on SOI substrates. We reported until now. Theoretical examinations on the have investigated this effect on Early voltage, cut-off devices will provide interesting information for designing frequency, and maximum oscillation frequency for any novel structures and benefit the fabrication of SiGe HBT on SOI substrate. It is found that the integrated circuits. Using two-dimensional (2-D) maximum oscillation frequency (fmax) of SiGe HBT on simulation by the commercial device simulator SOI substrate is much better than that of conventional DESSIS-ISE [14], we demonstrate that by applying SiGe HBT. The maximum oscillation frequency various buried oxide thickness to the SiGe HBTs on SOI increases with the increase in oxide thickness and tend substrates, the device characteristics of both DC and AC to saturate at oxide thickness of 0.15 gm. In order to are studied.

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Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

Joseph

Gillis

Doherty³

et al. 2008

IBM J. Res. & Dev.

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Collector optimization in advanced SiGe HBT technologies

Cited by 3 publications

References 8 publications

SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

SiGe HBT Technology Based on a 0.13-<inline-formula> <tex-math notation="TeX">$\mu{\rm m}$ </tex-math></inline-formula> Process Featuring an <inline-formula> <tex-math notation="TeX">${f}_{\rm MAX}$ </tex-math></inline-formula> of 325 GHz

A Simulation Study of Oxide Thickness Effect on the Performance of SiGe HBTs with SOI Structure

Through-silicon vias enable next-generation SiGe power amplifiers for wireless communications

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