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A metal/HfAlO/Si light emitting diode with Ge nanocrystals embedded in HfAlO has the visible light emission (610 nm) and the infrared emission (760 nm). The image and Ge content are measured by the transmission electron microscopy and Raman spectroscopy. The photoluminescence of Ge nanocrystals embedded in HfAlO has a peak wavelength at 700 nm, while the peak wavelength at 725 nm is observed for Ge nanocrystals embedded in HfO(2). The difference of it may be due to the larger band gap of HfAlO as compared to HfO(2). (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3025844

Using a TCAD simulator, we we know, little work on the effect of different BOX examine the oxide thickness effect on electrical thickness to the performance of the device has been characteristics of the SiGe HBT on SOI substrates. We reported until now. Theoretical examinations on the have investigated this effect on Early voltage, cut-off devices will provide interesting information for designing frequency, and maximum oscillation frequency for any novel structures and benefit the fabrication of SiGe HBT on SOI substrate. It is found that the integrated circuits. Using two-dimensional (2-D) maximum oscillation frequency (fmax) of SiGe HBT on simulation by the commercial device simulator SOI substrate is much better than that of conventional DESSIS-ISE [14], we demonstrate that by applying SiGe HBT. The maximum oscillation frequency various buried oxide thickness to the SiGe HBTs on SOI increases with the increase in oxide thickness and tend substrates, the device characteristics of both DC and AC to saturate at oxide thickness of 0.15 gm. In order to are studied.

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