Filling mechanism in microvia metallization by copper electroplating

Dow, Wei‐Ping; Yen, Ming-Yao; Liao, Shu-Hui; Chiu, Yong-Da; Huang, Hsiao-Chun

doi:10.1016/j.electacta.2008.06.042

Cited by 117 publications

(80 citation statements)

References 38 publications

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“…This phenomenon should stem from a convection-dependent competitive adsorption of additives, whose original occasion was attributed to the potentialdependent adsorption of chloride ions. 13,29,31,34 Figure 7b showed that the cathodic potential was not significantly changed after SPS injection, implying that there was no significant interaction among Polyquaternium-2, chloride ion, and SPS at the low potential. The deposition rate of copper was Cu (II) diffusion-controlled when Polyquaternium-2, chloride ions, and SPS presented in plating solution.…”

Section: Resultsmentioning

confidence: 97%

“…The synergy of these additives stemmed from the adsorptive and transport characteristics of chloride ions and from the competitive interaction between the suppressor, accelerator, and leveler. 13,[35][36][37][38][39][40][41][42][43][44][45][46][47] In order to further analysis the function of Polyquaternium-2 in TH electroplating process, the addition sequence was changed again (the addition sequence followed the description in Table 1) and the result was shown in Fig. 9.…”

Section: Resultsmentioning

confidence: 99%

“…[9][10][11] The additive system, used for PCB electroplating, generally includes accelerator (i.e., bis(3-sulfopropyl) disulfide), inhibitor (i.e., poly (ethyleneglycol)) and leveler (i.e., Janus Green B). [12][13][14][15] The synergy of these additives gives rise to a uniform plating or superfilling in the TH. 9,12 Some literatures indicated that leveler plays an important or decisive role in the accelerator-inhibitor-leveler system.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Chen

Wang

et al. 2016

Electrochemistry

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Poly[bis(2-chloroethyl)ether-alt-1,3-bis [3-(dimethylamino)propyl]urea] (Polyquaternium-2) was employed as a leveler in the through-hole (TH) electroplating experiments from an acidic sulphate bath. The interaction between Polyquaternium-2 and copper surface was investigated using Field Emission Scanning Electronic Microscope (FE-SEM) and X-ray Photoelectron Spectra (XPS). The electrochemical behavior of Polyquaternium-2 and its interaction with other additives, such as a suppressor and an accelerator were characterized using rotating disk electrode. Polyquaternium-2 could absorb on copper surface to form an adsorption layer and inhibit the copper electrodeposition. As shown in the TH electroplating experiments, a copper deposit with uniform thickness was obtained when 0.17 µmol/L Polyquaternium-2 was added. The addition of Polyquaternium-2 could also increase the cathodic polarization, which is attributed to the adsorption of Polyquaternium-2 on the cathode in the process of TH electroplating. The results indicate that Polyquaternium-2 is an effective leveler used for TH electroplating, having a good synergy with SPS, PEG and Cl − .

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Chen

Wang

et al. 2016

Electrochemistry

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“…A number of research groups have successfully used it to fill damascene structure by electroplating method [5,6]. The electroplating is presently the most popular method used for Cu deposition in semiconductor fabrication processes because of lower cost, lower growth temperature, higher throughput, and excellent gap-filling capability [7,8].…”

Section: Introductionmentioning

confidence: 99%

Surface Pretreatments for Remove of Native Cu Oxide Layer

Lee

et al. 2011

JSA

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In order to remove native Cu oxides formed on Cu seed layer, TS-40A and H 2 SO 4 solutions were used. After various pretreatments, the changed surface of Cu seed layer was estimated by SEM and XPS. For all pretreatments, the mass of samples was decreased. The mass loss of sample treated in H 2 SO 4 solution for 60 s was the largest. After TS-40A pretreatment, native Cu oxide layer is not at all removed although the carbon on Cu seed layer was removed mainly with a few loss of sample mass. By H 2 SO 4 treatment after TS-40A pretreatment, most of native Cu oxides on Cu seed layer were removed with a lot of mass loss and the oxides will be eliminated by control of dipping time. Consequently, we found that the pretreatment by H 2 SO 4 is suitable to obtain a Cu seed layer removed native oxide for electrodeposition

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“…Traditionally, copper electroplating additives can be divided into three categories, depending on their functions: [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] accelerators (or brighteners), suppressors (or inhibitors, suppressors type I), and levelers (or suppressors type II). These additives are commonly used for via and through hole filling process.…”

mentioning

confidence: 99%

Effects of Additives and Convection on Cu Foil Fabrication with a Low Surface Roughness

Chan

Ren

Wen

et al. 2017

J. Electrochem. Soc.

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This study focuses on the effects of plating additives and forced convection on microstructure and surface roughness of a copper foil at high current densities. A pilot Cu plating bath was designed according to the simulation of flow field using COMSOL Multiphysics. Accordingly, accurate fluid flow rates and the streamline patterns thereof were obtained in this work. The surface roughness of copper deposit depended on the limiting current density of cupric ions, the distribution of adsorbed chloride ions and the adsorbed organic additives at high current densities (10∼60 A·dm−2). Forced convection has strong influence on these factors as mentioned above. A copper foil with low surface roughness could be consequently obtained for the application of high frequency transmission in printed circuit board industry.

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Filling mechanism in microvia metallization by copper electroplating

Cited by 117 publications

References 38 publications

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Polyquaternium-2: A New Levelling Agent for Copper Electroplating from Acidic Sulphate Bath

Surface Pretreatments for Remove of Native Cu Oxide Layer

Effects of Additives and Convection on Cu Foil Fabrication with a Low Surface Roughness

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