Colour centres in electron irradiated mgo

Chen, Y; Trueblood, D L; Schow, O.E.; Tohver, H. T.

doi:10.1088/0022-3719/3/12/016

Cited by 93 publications

(20 citation statements)

References 23 publications

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“…2c). A similar procedure was already used to match the high energy threshold (1.6 MeV) of O-divacancy (F 2 centers) production in MgO with a simple Kinchin-Pease model of cascades [15]. At 2.5…”

Section: Discussionmentioning

confidence: 99%

Threshold displacement energy in yttria‐stabilized zirconia

Costantini

Beuneu

2007

Phys. Status Solidi (c)

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PACS 61.80. Fe, 61.82.Ms, 76.30.Mi We have studied the color center production in yttria-stabilized zirconia single crystals (i.e. ZrO 2 : Y with 9.5 mol% Y 2 O 3 ) with the (100) orientation, by electron irradiations at energies ranging between 1.0 and 2.5 MeV. Electron paramagnetic resonance (EPR) measurements show that three paramagnetic centers are stable at room-temperature: i) an F + -type center (singly ionized oxygen vacancy), ii) the so-called T-center (Zr 3+ in a trigonal oxygen environment), and iii) a hole center. The growth curves of F + -type centers at variable electron energy cannot be rescaled versus the absorbed dose. These data confirm that F + -type center production is primarily governed by elastic collision processes with a threshold electron energy about 1.0 MeV. This can be correlated to a threshold displacement energy either about 120 eV for the O-atoms in the collision cascades, or about 80 eV for the Zr-(or Y-) atoms. In contrast, the growth curves of T-centers at variable electron energy are rescaled versus the absorbed dose.

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Section: Discussionmentioning

confidence: 99%

Threshold displacement energy in yttria‐stabilized zirconia

Costantini

Beuneu

2007

Phys. Status Solidi (c)

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“…However, in the case of fast electron irradiation with energies above 300 KeV in both materials Hodgson et al [21,22] have observed a broad band in visible spectrum range probably due to F-type centre (oxygen vacancy). It is interesting to notice that for instance in MgO and Al 2 O 3 F-type centres can be created not only under the electron irradiation [23,24], but also under irradiation with di erent ions [25±27]. One question is raised: why we did not see F centre production in LiNbO 3 , KNbO 3 or TeO 2 under ion irradiation, although they can be created in other oxides like MgO, Al 2 O 3 .…”

Section: Resultsmentioning

confidence: 99%

Low temperature X-ray luminescence of KNbO3 crystals

Попов¹,

Balanzat²

2000

Nuclear Instruments and Methods in Physics Research Section B:

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“…3,6,12,22 Two absorption bands at 3.49 and 1.27 eV ͑355 and 975 nm, respectively͒ are correlated with anion divacancies, F 2 . 6,12,20,21,23 In recent a͒ Electronic mail: bsavoi@fis.uc3m.es publications by other authors, the bands at 2.16 eV ͑574 nm͒ and 2.3 eV ͑540 nm͒ were treated as due to the same defect. However, these two bands are distinctly different for a variety of reasons: ͑a͒ The former is blue, and the latter is purple.…”

Section: A Background Of Point Defectsmentioning

confidence: 99%

“…Determination of the threshold of the production of the 2.16 eV band as a function of the electron energy from a Van de Graaff accelerator indicates that this band is compatible with two adjacent vacancies. 23 However, in heavily thermochemically reduced crystals, where the statistical probability of forming anion divacancies varies with the square of the anionvacancy concentration ͑see Ref. 2͒, the 2.16 eV band was absent.…”

Section: A Background Of Point Defectsmentioning

confidence: 99%

“…The band at 2.16 eV is due to an unidentified defect; 4,12,18,[20][21][22]37 this defect is larger than a monovacancy, but likely no larger than two adjacent vacancies. 23 For comparison, the absorption spectrum of a sample ͑0.8 mm in thickness͒ irradiated with a neutron dose of 1.0ϫ10 17 n/cm 2 is also shown in Fig. 2.…”

Section: Optical Absorption Measurementsmentioning

confidence: 99%

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Optical and mechanical properties of MgO crystals implanted with lithium ions

Savoini

Cáceres

Vergara

et al. 2004

Journal of Applied Physics

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Defect profile induced by implantation of Li+ ions with an energy of 175 keV and a fluence of 1×1017 ions/cm2 in MgO single crystals was characterized by Rutherford backscattering and optical absorption measurements. Several absorption bands at 5.0, 3.49, 2.16, and 1.27 eV, identical to those found in neutron irradiated crystals, were observed and have been previously associated with oxygen vacancies and higher-order point defects involving oxygen vacancies. Despite the high fluence of Li+ ions, no evidence was found for the formation of Li nanocolloids during implantation. Nanoindentation experiments demonstrated that both the hardness and Young’s modulus were higher in the implanted layer than in the sample before implantation. The maximum values were H=(17.4±0.4) and E=(358±9) GPa, respectively, at a contact depth of ≈165 nm. Thermal annealings in flowing argon at increasing temperatures improved the crystalline quality of the implanted layer. After annealing at 500 K, two extinction bands at ≈2.75 and 3.80 eV emerged. These bands are attributed to Mie scattering from metallic lithium nanocolloids with either a face-centered- or a body-centered-cubic structure. The latter band was almost absent by 950 K. The former reached a maximum intensity after the thermal treatment at 1050 K and disappeared by 1250 K. The behavior of these bands can be satisfactorily explained by the Maxwell–Garnett theory. The decrease in hardening cannot be correlated with the thermal destruction of the absorption bands at 5.0, 3.49, 2.16, and 1.27 eV, but rather with the annihilation of both lithium and oxygen interstitials. Lithium outdiffusion from the implanted region takes place at temperatures of ≈1100 K. It is concluded that the hardening observed in the implanted region was primarily due to the extraordinarily large concentration of both lithium and oxygen interstitials.

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Colour centres in electron irradiated mgo

Cited by 93 publications

References 23 publications

Threshold displacement energy in yttria‐stabilized zirconia

Threshold displacement energy in yttria‐stabilized zirconia

Low temperature X-ray luminescence of KNbO3 crystals

Optical and mechanical properties of MgO crystals implanted with lithium ions

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