Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

“…All samples were firstly cleaned following the procedure developed by Tereshchenko et al [18] yielding a (4×1) Ga rich surface reconstruction after annealing at 530 °C in the ultra high vacuum (UHV) chamber. The nitridation process was then carried out using a N 2 plasma commercial electron resonance cyclotron source (SPECS MPS-ECR), operating in atom beam mode at a pressure of 10 -2 Pa with a sample current density around 10 nA/cm 2 , installed in a UHV chamber and described elsewhere [29]. The flux of nitrogen atoms reaches the sample surface through the pressure difference between the plasma source and the UHV chamber.…”

Conduction Mechanisms in Au/0.8 nm–GaN/n–GaAs Schottky Contacts in a Wide Temperature Range

“…This nitridation process led to the growth of a 0.8 nm-thick layer of undoped GaN. Following the nitridation step, the samples were annealed at 620 • C for 1 h to crystallize the GaN layer [39,45,46].…”

“…Therefore, the interface quality has an essential impact on device behavior and performance. In this context, surface passivation is the best method of controlling the defective states [27,30,31,[35][36][37][38][39]., Many studies on the nitridation of the GaAs surface have been carried out [27,30,37,38,[40][41][42][43] to improve the behavior and the electrical properties of the Schottky contacts (e.g., the ideality factor, barrier height, saturation current, series resistance and reverse current. Moreover, the nitride layers have good stability against the formation of amorphous surface oxides, high electronegativity, and thermal stability [27,44].…”

Study of Temperature-dependent Conduction Mechanisms in Au/0.8nm-GaN/n-GaAs Schottky Diode

“…This process allows for creating a 0.8 nm-thick undoped GaN layer. Following the nitridation step, the substrate was annealed at 620 °C for 1 hour in view to crystallize the GaN layer [37,43,44]. The current-voltage measurements were investigated under different temperatures (80-420 K), using an automatic standard apparatus based on a current source Keithely 220, a high impedance voltmeter Agilent 34401 A, and a liquid nitrogen cryostat Janis VPF 400.…”

“…So, the interface quality has an essential impact on device behavior and performance. In this context, surface passivation is the best method to control the defective states [27][28][29][33][34][35][36][37]. Many studies have been done to improve the interface properties by nitridation of GaAs surface [27,28,35,36,[38][39][40][41].…”