Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth

Laurence, G.; Simondet, F.; Saget, P.

doi:10.1007/bf00900540

Cited by 45 publications

(4 citation statements)

References 13 publications

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“…In fact, specific reactor designs and/or growth procedures may lead to a large reduction of the transition width. This is illustrated in the figure 18 which gives the refractive index variations of a Gazas -(Al, Ga)As transition obtained with Fig. 17. -Refractive index profile corresponding to the experi-' mental (d, tp) locus shown in the figure 10.…”

Section: Profile Analysis Of Mo-vpe Grownmentioning

confidence: 89%

“…This can be seen in the figure 6, for the first few minutes of heating. At about 600 OC, an anomalous behaviour of the P variations is observed, which could be attributed to desorption of physisorbed molecules such as H20, CO, oxygen... [18]. As the temperature reaches a plateau at about 730 OC, it becomes clear that only the hydrogen-arsine mixture allows a stabilization of'!'.…”

Section: Surface Stability During Initial Heat-treat-mentioning

confidence: 99%

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Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

Laurence¹,

Hottier²,

Hallais³

1981

Rev. Phys. Appl. (Paris)

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Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growth

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Section: Profile Analysis Of Mo-vpe Grownmentioning

confidence: 89%

Section: Surface Stability During Initial Heat-treat-mentioning

confidence: 99%

Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

Laurence¹,

Hottier²,

Hallais³

1981

Rev. Phys. Appl. (Paris)

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“…However, the Raman spectra after re-growth seems to be broader than that of the initially grown GaAs layer, indicating the crystal quality of re-grown GaAs layer seems to be not perfect. It is possibly because that the surface treatment including wet and thermal treatment before the regrowth has not been optimized, whereas surface chemistry strongly impacts the crystal quality of III-V films 27 37 .…”

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confidence: 99%

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

Geum

Park

Lim

et al. 2016

Sci Rep

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Si-based integrated circuits have been intensively developed over the past several decades through ultimate device scaling. However, the Si technology has reached the physical limitations of the scaling. These limitations have fuelled the search for alternative active materials (for transistors) and the introduction of optical interconnects (called “Si photonics”). A series of attempts to circumvent the Si technology limits are based on the use of III-V compound semiconductor due to their superior benefits, such as high electron mobility and direct bandgap. To use their physical properties on a Si platform, the formation of high-quality III-V films on the Si (III-V/Si) is the basic technology ; however, implementing this technology using a high-throughput process is not easy. Here, we report new concepts for an ultra-high-throughput heterogeneous integration of high-quality III-V films on the Si using the wafer bonding and epitaxial lift off (ELO) technique. We describe the ultra-fast ELO and also the re-use of the III-V donor wafer after III-V/Si formation. These approaches provide an ultra-high-throughput fabrication of III-V/Si substrates with a high-quality film, which leads to a dramatic cost reduction. As proof-of-concept devices, this paper demonstrates GaAs-based high electron mobility transistors (HEMTs), solar cells, and hetero-junction phototransistors on Si substrates.

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“…Pour GaAs la désoxydation in situ peut être réalisée par désorption thermique sous flux d'arsenic de préférence mais pas nécessairement [21][22][23], par exposition à HCI gazeux [24,25] ou par bombardement ionique et recuit [26][27][28].…”

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Croissance de Si3N4 sur GaAs et InP par pulvérisation réactive par faisceau d'ions

Bosseboeuf

Bouchier

1988

Rev. Phys. Appl. (Paris)

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2014 La spectrométrie Auger est utilisée pour étudier la préparation chimique et le nettoyage ionique de substrats d'InP puis le mode de croissance et les propriétés d'encapsulation de Si3N4 déposé par pulvérisation ionique réactive sur GaAs et InP. La pulvérisation préférentielle du phosphore lors d'un décapage ionique est mise en évidence par une décroissance de 30 % du rapport P/In lorsque l'on fait varier l'énergie des ions de 90 eV à 500 eV. L'observation des pics Auger de l'arsenic et du gallium pour GaAs et de l'indium pour InP lors du dépôt de Si3N4 indique une altération de la composition de surface du substrat au début de la croissance du nitrure. Des mécanismes sont proposés pour rendre compte des comportements constatés. Quelques monocouches de Si3N4 suffisent pour stabiliser en température la surface de GaAs mais limitent seulement partiellement la diffusion de l'indium dans le cas de InP.

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Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth

Cited by 45 publications

References 13 publications

Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

Qualitative and quantitative assessments of the growth of (Al,Ga) As-GaAs heterostructures by in situ ellipsometry

Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications

Croissance de Si3N4 sur GaAs et InP par pulvérisation réactive par faisceau d'ions

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