Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range

Tanimoto, Satoshi; Matsui, Kohei; Zushi, Yusuke; Sato, S.; Murakami, Yoshinori; Takamori, M.; Iseki, Takashi

doi:10.4028/www.scientific.net/msf.717-720.853

Cited by 11 publications

(7 citation statements)

References 4 publications

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“…The SiC-MOSFET and AMC1 are joined by a flip-chip-bonding technique using Al bumps [8]. The others are joined by Au-Ge solder [9]. SUS410, that exhibits a coefficient of thermal expansion (CTE) similar to that of AMC2, is used as the cooling fin material [10].…”

Section: High-temperature Operationmentioning

confidence: 99%

See 1 more Smart Citation

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

Sato

Tanisawa

Anzai³

et al. 2016

MSF

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In this paper, we describe a power module fabricated using SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). A C-R snubber is integrated into this power module for reduction of the surge voltage and dumping of the voltage ringing. The four SiC MOSFETs are sandwiched between active metal copper (AMC) substrates. The surfaces of the SiC MOSFETs are attached to AMC substrates by Al bumps, owing to which the power module shows low inductance. Moreover, this power module ensures credibility and reliability at higher operating temperatures beyond 200 °C. The switching characteristics of the module are studied experimentally for high-temperature and high-frequency operations.

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Section: High-temperature Operationmentioning

confidence: 99%

“…In this study, the authors designed and fabricated a SiC power module. The SiC power module which the snubber circuit is built in was designed and fabricated, as reported in reference [8][9][10]. This power module ensures credibility and reliability at higher operating temperatures beyond 200 °C.…”

Section: Introductionmentioning

confidence: 99%

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

Sato

Tanisawa

Anzai³

et al. 2016

MSF

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show abstract

“…The SiC-MOSFET and AMC1 are joined by a flip-chip-bonding technique using Al bumps [1]. The others are joined by Au-Ge solder [2]. SUS410, exhibiting a coefficient of thermal expansion (CTE) close to that of AMC2, is used as the cooling fin material [3].…”

Section: Design Of Power Module For High-temperature Operationmentioning

confidence: 99%

“…SUS410, exhibiting a coefficient of thermal expansion (CTE) close to that of AMC2, is used as the cooling fin material [3]. The reliability assessment of the Au-Ge solder joints, Al-bumps, and module for the extended temperature range is omitted in this paper because they have already been discussed in [1], [2], and [3], respectively.…”

Section: Design Of Power Module For High-temperature Operationmentioning

confidence: 99%

(Invited) Characteristics of a Wire-Bonding-Less SiC Power Module Operating in a Wide Temperature Range

Sato¹,

Tanisawa²,

Anzai³

et al. 2015

ECS Trans.

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Using high-speed switching, SiC power devices can reduce on-resistance in the on-state to realize low power converter losses. In addition, SiC power devices can be operated in high temperatures; thus, their cooling systems can be reduced in size or removed altogether, thereby increasing the power density of the power converter. The authors have studied a power module and power converter using properties of SiC power devices, and have previously proposed a power converter having high power density with a power module that is capable of high temperature operation , a gate driving technique for SiC power devices to prevent false turn-on with high-speed switching, and development of a noise filter for high-speed switching or high-frequency switching. In this study, we designed and fabricated a SiC power module with a built-in snubber circuit. This power module is operable in high temperatures over 200 °C.

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“…Efforts for seeking a drop-in solution with improved performance have been attempted for more than two decades. The HTLF solder candidates include: AuSn/AuSi/ AuGe [5][6][7][8], ZnAl-based [9,10], BiAg/BiCu/BiAgX [11][12][13][14][15], and SnSb-based solders [3] etc. In addition to a solder alternative, transient-liquid phase soldering (TLPS), sintering, semi-sintering, and Ag-epoxy options have also been attempted for many years [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

A Drop-In High-Temperature Pb-Free Solder Paste That Outperforms High-Pb Pastes in Power Discrete Applications

Zhang,

Richmond,

Aserian

et al. 2023

Journal of Microelectronics and Electronic Packaging

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Sn-based high-temperature Pb-free (HTLF) solder pastes have been developed as a drop-in solution to replace high- Pb solder pastes in power discrete applications. The pastes were designed with Indium Corporation’s DurafuseVR technology, to combine the merits of two constituent powders. A SnSb-based Ag/ Cu-containing high-temperature powder, with a melting temperature above 320 degrees C, was designed to maintain high-temperature performance. A Sn-rich SnAgCu-Sb powder, with a melting temperature around 228 degrees C, was added to the paste to enhance wetting and improve joint ductility. In the design, the final joint will have the low-melting phase (the melting temperature >228 degrees C) in a controllable quantity embedded into the high-melting SnSb matrix. HTLF-1, one of the designs, maintained the bond shear strength up to 15 MPa, even around 290 degrees C. Another design, HTLF-2, has a similar bond shear strength as Pb92.5/Sn5/Ag2.5 around 290 degrees C, but exceeds substantially below 250 degrees C. The power discrete components had been built with both HTLF solder pastes for both die-attach and clip-bond through the traditional high-Pb process, which demonstrated the drop-in processing compatibility. The components survived three additional surface mounting (SMT) reflows (peak temperature upto 260 degrees C) and passed moisture sensitivity level 1 (MSL1). This confirmed that the maintained joint strength (comparable to or stronger than high-Pb), helped to keep the joint integrity within the encapsulated components in the following SMT process, even with the controlled quantity of the melting phases above 228 degrees C. Both HTLF solder pastes outperformed Pb92.5/Sn5/Ag2.5 in the resistance from drain to source when power is on (RDS(on)), even after 1,000 cycles of temperature cycling test (TCT) under 255/175 degrees C, which is attributed to the intrinsic lower electrical resistivity of Sn in both HTLF pastes. Microstructural observation had shown no corner cracks for both die-attach and clip-bond joints after TCT.

show abstract

Common Metal Die Attachment for SiC Power Devices Operated in an Extended Junction Temperature Range

Cited by 11 publications

References 4 publications

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

(Invited) Characteristics of a Wire-Bonding-Less SiC Power Module Operating in a Wide Temperature Range

A Drop-In High-Temperature Pb-Free Solder Paste That Outperforms High-Pb Pastes in Power Discrete Applications

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