Communication—Halide Ions in TEG-Based Levelers Affecting TSV Filling Performance

Kim, Myung Joon; Seo, Yutaek; Oh, Jung Hwan; Lee, Yoon Jae; Kim, Hoe Chul; Kim, Young Gyu; Kim, Jae Jeong

doi:10.1149/2.0101606jes

Cited by 28 publications

(27 citation statements)

References 10 publications

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“…5b). Consistent with previous research, 5,6 I − showed a stronger inhibition effect on the Cu electrodeposition when the rotating speed increased (Fig. 5a).…”

Section: Resultssupporting

confidence: 92%

Cyclic Voltammetry Stripping Analysis to Determine Iodide Ion Concentration in Cu Plating Bath

Yoon

Ham

Kim

et al. 2018

J. Electrochem. Soc.

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Accurate monitoring of an electroplating bath's chemical balance is a key factor for maintaining its performance during a long-term plating operation. In this paper, a method is suggested to measure the concentration of iodide ion (I − ), an inorganic leveler for through-silicon via (TSV) filling, based on its electrochemical response. During the operation of plating, I − was consumed via the reaction with Cu + (Cu + + I → CuI), an oxidation reaction (2I − → I 2 + 2e), as well as a physical incorporation. The I − concentration decrease resulted in a degradation of the bath, while the major byproducts (CuI and I 2 ) rarely influenced on bath performance. In order to monitor the I − concentration by cyclic voltammetry stripping (CVS) analysis, the electrochemical response of I − was examined at various conditions. I − suppressed the Cu electrodeposition rate; this response was dependent on the mass transport of I − and the applied potential of cathode. A subsequent effective coverage analysis revealed that not only I − but also Cu(I) iodide (CuI) was a key inhibitor, demonstrating that the inhibition of I − becomes weaker at a negative potential. With a responsive curve (RC)-CVS analysis conducted at an optimized condition, a linear relationship between the real and measured concentrations could be found, irrespective of other additives' concentrations. The method suggested in this paper enabled the direct monitoring of the I − concentration in a Cu plating bath.

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“…5b). Consistent with previous research, 5,6 I − showed a stronger inhibition effect on the Cu electrodeposition when the rotating speed increased (Fig. 5a).…”

Section: Resultssupporting

confidence: 92%

Cyclic Voltammetry Stripping Analysis to Determine Iodide Ion Concentration in Cu Plating Bath

Yoon

Ham

Kim

et al. 2018

J. Electrochem. Soc.

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“…The electrochemical behavior at 300 rpm with the combination of SPS-PEG-PPG-leveler containing I − as the counter anion was similar to the result with 1000 rpm. 28 Therefore, 0 and 1000 rpm D435 were the representative rotating conditions for our experiments. LSV was carried out by sweeping the potential from 150 mV (vs. Ag/AgCl) to −350 mV.…”

Section: Methodsmentioning

confidence: 99%

The Influences of Iodide Ion on Cu Electrodeposition and TSV Filling

Kim

2016

J. Electrochem. Soc.

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Through silicon via (TSV) technology has been researched for 3-dimensional packaging of electronic devices, and Cu electrodeposition has been used for TSV filling. The organic additives are one of the most important factors in Cu electrodeposition affecting Cu gap-filling, and the leveler usually plays a decisive role. In this research, iodide ion (I − ) is adopted instead of organic leveler for Cu bottom-up filling. The behaviors of I − are investigated by various types of electrochemical analyses. Especially, the influences of I − on the adsorption of the accelerator and suppressor are extensively studied, and it is confirmed that I − makes the suppression layer robust while reducing the adsorption of the accelerator. Also, it was observed that the effect of I − is greater under the strong convection of electrolytes than without convection, meaning that I − could induce selective deposition at the bottom of the features. Based on this, TSV-scaled trenches are successfully filled by potentiostatic Cu electrodeposition in the presence of the accelerator, suppressor, and I − without any organic levelers.

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“…According to reports, leveling agents can be roughly divided into two categories: quaternary ammonium cation or positively charged nitrogen-containing heterocyclic compound. 9 JGB is one of the most studied leveling agents. As shown in Figure 1, JGB is a nitrogen-containing heterocyclic compound with a positive charge.…”

Section: Introductionmentioning

confidence: 99%

“…Currently, there is no complete consensus on the mechanism of action of leveling agents. According to reports, leveling agents can be roughly divided into two categories: quaternary ammonium cation or positively charged nitrogen-containing heterocyclic compound . JGB is one of the most studied leveling agents.…”

Section: Introductionmentioning

confidence: 99%

Prediction and Effect Verification of Thiamine as a Leveling Agent in Chip Wafer Electroplating

Wei,

Tan,

Liu

et al. 2023

ACS Omega

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Communication—Halide Ions in TEG-Based Levelers Affecting TSV Filling Performance

Cited by 28 publications

References 10 publications

Cyclic Voltammetry Stripping Analysis to Determine Iodide Ion Concentration in Cu Plating Bath

Cyclic Voltammetry Stripping Analysis to Determine Iodide Ion Concentration in Cu Plating Bath

The Influences of Iodide Ion on Cu Electrodeposition and TSV Filling

Prediction and Effect Verification of Thiamine as a Leveling Agent in Chip Wafer Electroplating

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