Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructures

Иванов, С. В.; Луценко, Е. В.; Sorokin, S. V.; Sedova, I. V.; Gronin, S. V.; Voinilovich, A. G.; Tarasuk, N. P.; Yablonskii, G. P.; Kop’ev, P. S.

doi:10.1016/j.jcrysgro.2008.11.032

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…5. The green output power increases rapidly when excitation power exceeds 0.6-0.7 W. The emission power reached the maximum value of 65 mW at the excitation power of P exc ¼ 1.3 W, which is about an order of magnitude higher than earlier reported value [4].…”

Section: Experiments and Calculationsmentioning

confidence: 51%

“…Optically pumped undoped CdSe/ZnSe QD laser heterostructures are free from the p-type degradation problem and demonstrate much better stability in comparison with green LDs. Recently the first violet-green integrated injection laser converter comprising a green CdSe QD laser chip optically pumped by emission of a commercial InGaN/GaN pulsed LD has been fabricated and studied [4]. The achieved values of maximum output power and external quantum efficiency were 8 mW and 1%, respectively.…”

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confidence: 99%

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Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Луценко

Sorokin²,

Sedova³

et al. 2010

Physica Status Solidi (b)

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The violet-green laser converter based on a molecular-beamepitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II-VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2-nm-thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pumping of the CdSe QDS due to tunnelling of charge carriers between the QDS separated by 5-nm-thick ZnSe/ZnSSe/ZnSe barriers and high optical confinement factor. Optimization of both cavity length of the II-VI laser and parameters of optical focusing system to obtain a narrow stripe with the length slightly exceeding the cavity length has been performed. As a result, the maximum achieved quantum efficiency and pulse output power in green have been as high as 8% and 65 mW, respectively.

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Section: Experiments and Calculationsmentioning

confidence: 51%

mentioning

confidence: 99%

Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Луценко

Sorokin²,

Sedova³

et al. 2010

Physica Status Solidi (b)

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“…Compact ZnCdSe/ZnSe/ZnSSe/ZnMgSSe quantum dot (QD) lasers pumped by an e-beam [1] or by a violet III-N laser diode (LD) [2] have rather high efficiency and slow degradation rate in comparison with II-VI laser diodes. It is expected that the use of electronicallycoupled multiple QD sheets in the active region of such lasers will enable us to reduce laser threshold and to improve noticeably various laser characteristics.…”

mentioning

confidence: 99%

Internal parameters and optical properties of green II‐VI heterostructure lasers with active region composed of multi‐sheet electronically‐coupled CdSe quantum dots

Vainilovich

Луценко

Tarasuk

et al. 2010

Phys. Status Solidi (c)

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Optically pumped green‐emitting ZnSe‐based laser heterostructures of optimized design have been grown by molecular‐beam epitaxy and studied. The structures containing five electronically‐coupled stacked CdSe quantum dot (QD) sheets demonstrate the minimum threshold power density of 2.2 kW/cm2 and the maximum external quantum efficiency of ∼ 50%. Internal laser characteristics were determined by measuring the differential laser efficiency and laser threshold of a series of samples with different cavity lengths. The characteristic gain and internal quantum efficiency of the structures have been shown to reach the values as high as ΓG0 = 114 cm‐1 and ηi = 65.4%, while the transparency threshold and internal losses are evaluated as low as IT = 1.22 kW/cm2 and αi = 2.55 cm‐1, respectively. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures

Vainilovich

Луценко

Yablonskii

et al. 2012

NATO Science for Peace and Security Series B: Physics and Biophysics

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Compact green laser converter with injection pumping, based on MBE grown II–VI nanostructures

Cited by 6 publications

References 7 publications

Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Internal parameters and optical properties of green II‐VI heterostructure lasers with active region composed of multi‐sheet electronically‐coupled CdSe quantum dots

Laser and Optical Properties of Green-Emitting ZnCdSe Quantum Dot Based Heterostructures

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