2010
DOI: 10.1002/pssb.200983275
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Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode

Abstract: The violet-green laser converter based on a molecular-beamepitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II-VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2-nm-thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pump… Show more

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Cited by 10 publications
(11 citation statements)
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“…Assuming that exciting stripe width d is fixed, the threshold pumping power of optically pumped QW laser could be expressed in the following form [14]:…”
Section: Methodsmentioning
confidence: 99%
“…Assuming that exciting stripe width d is fixed, the threshold pumping power of optically pumped QW laser could be expressed in the following form [14]:…”
Section: Methodsmentioning
confidence: 99%
“…A concept of stress compensation applied to the structure design involves 1. growing complex tensile-strained ZnSe-1.5 nm/ZnS 0.15 Se 0.85 -3.5 nm/ZnSe-1.5 nm barriers between compressively strained QD sheets, which provide efficient tunnelling of non-equilibrium carriers [5], and 2. compensation of the compressive strain induced by the ZnMgSSe/ZnSe GIW SLs by intentionally reducing the average lattice parameter of the central flat-band ZnS 0.15 Se 0.85 /ZnSe waveguide SL below that of GaAs [6]. The high structural quality of the structure as well as good agreement of intended and as-grown SL period thicknesses are confirmed by the cross-section TEM image shown in Fig.…”
Section: Fig 1 Bright Field Cross-section Tem Image Of Cd(zn)se/znmgmentioning
confidence: 99%
“…The laser chips with a short cavity length ( 100 mm) were employed to achieve a minimum threshold power value [5]. The maximum room temperature values of the pulse output power of P max ¼ 154 mW (l las ¼ 543 nm) and quantum conversion efficiency of h ¼ 25.4% have been achieved at the excitation level of P exc 1.0 W (l ex ¼ 416 nm) for the structure with five QD sheets in the active region placed in the asymmetrical GIW waveguide which provides better overlap of the active region with the fundamental light mode.…”
Section: Fig 1 Bright Field Cross-section Tem Image Of Cd(zn)se/znmgmentioning
confidence: 99%
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