2010
DOI: 10.1049/el.2010.0888
|View full text |Cite
|
Sign up to set email alerts
|

Compact low swing gearbox-type integrated capacitive DC/DC converter

Abstract: A gearbox-type capacitive DC/DC converter is presented with an enhanced switch-and capacitor-array. The switch overhead is reduced significantly with respect to a conventional implementation. The presented topologies exhibit a lower swing on the intermediate capacitor nodes so that power loss due to the parasitic capacitances on these nodes is reduced drastically.Introduction: Each capacitive DC/DC converter topology has a dedicated voltage conversion ratio (VCR) for which it can operate in an efficient way. G… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
4
0

Year Published

2014
2014
2020
2020

Publication Types

Select...
4
2
1

Relationship

0
7

Authors

Journals

citations
Cited by 8 publications
(4 citation statements)
references
References 4 publications
0
4
0
Order By: Relevance
“…For a single-output converter, different topologies can be evaluated by simply comparing their SSL topology factors, K c , to one another [13], [31]. These are in essence their SSL-resistance [28], but normalized for switch frequency and total flying capacitance [13].…”
Section: A Lossesmentioning
confidence: 99%
“…For a single-output converter, different topologies can be evaluated by simply comparing their SSL topology factors, K c , to one another [13], [31]. These are in essence their SSL-resistance [28], but normalized for switch frequency and total flying capacitance [13].…”
Section: A Lossesmentioning
confidence: 99%
“…respectively, with V out the output voltage, K BP the topological capacitor node swing factor [19], α t the transistor capacitance per unit conductance and V trans the transistor voltage swing. Note that (7) assumes only one type of transistor is used and that V trans is equal for all transistors.…”
Section: Topological Factormentioning
confidence: 99%
“…Consequently, another metric M sw , introduced by [VB10], is required to capture this influence. Metric M sw , given in Eq.…”
Section: Topology Comparison Parametersmentioning
confidence: 99%
“…The capacitance density of integrated capacitors heavily influences the realizable power density [And14b] [VP13] [Mey13c]. On top of that, M sw -associated losses have a large impact on the system efficiency as C par may be subject to very high voltage swing [VB10] [Mey14] and produce losses, as given by Eq 7.3.…”
Section: Topology Comparison Parametersmentioning
confidence: 99%