Compact memristor‐based ultra‐wide band chirp pulse generator

Barraj, Imen; Bahloul, Mohamed A.; Fouda, Mohammed E.; Masmoudi, Mohamed

doi:10.1002/cta.2717

Cited by 6 publications

(3 citation statements)

References 15 publications

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“…These unique features have attracted much attention and pushed researchers to think about memristor as an alternative technology of non-volatile memory and computing systems. 14,15 Subsequently, memristors have been utilized in many applications such as oscillators, [16][17][18] analog to digital converters, 19 pattern recognition, 20 neural networks. 21,22 Numerous researchers have acknowledged that memristor-based resistive ternary CAM is an excellent associative memory based-architecture that meets technological challenges in terms of energy and scalability.…”

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confidence: 99%

Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

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Resistive ternary content addressable memories (Re-TCAMs) are considered a potential platform for in-memory associative processing. Re-TCAM permits the store and process of the data in the same physical area, allowing inmemory computing. Given the unique properties of the non-volatile memristive device, Re-TCAM is capable of low search energy, large-scale storage, and massively parallel processing. However, like any other semiconductor, memristor as a nanodevice suffers from fabrication process imperfections that provoke a significant variance in their high (R H) and low (R L) resistance states. These variations might lead to the malfunction of the Re-TCAM array and affect its performance and reliability. This paper proposes a simplified mathematical formulation of the memristor state variability for 2T2M bit-cell-based Re-TCAM array. We present a comprehensive statistical design, considering different circuit parameters and variance effects, such as tolerance of memristance variation, the memristor ratio (α = R H =R L), transistor technology, and memory width. The impact of these parameters on the performance is formulated as the probability of error is extensively studied, and a closed-form expression for the optimal threshold voltage is derived. The utility of the presented investigation is illustrated using a design example with real device parameters.

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confidence: 99%

Variability analysis of resistive ternary content addressable memories

Bahloul

Fouda

Barraj

et al. 2020

Circuit Theory & Apps

Self Cite

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“…Moreover, their non-volatile nature allows for instant-on capabilities and low power consumption, making them ideal for energy-efficient devices and Internet of Things (IoT) applications. Additionally, memristors are used for analog design and signal processing applications [13][14][15][16][17]. They offer the ability to store and manipulate continuous signals, making them suitable for applications such as audio and video processing, signal filtering, signal amplification, radio frequency design, and control systems.…”

Section: Introductionmentioning

confidence: 99%

Overview of Memristor-Based Design for Analog Applications

Barraj,

Mestiri,

Masmoudi

2024

Micromachines

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Memristor-based design has gained significant attention in recent years due to its potential to revolutionize various fields such as artificial intelligence, neuromorphic computing, non-volatile memory, signal processing, filtering, and radio frequency design. These emerging devices offer unique advantages such as non-volatile memory, low power consumption, and a high integration density. Their scalability and compatibility with existing fabrication processes make them an attractive option for industry adoption, paving the way for faster and more efficient architecture design. Researchers are actively exploring ways to optimize memristor technology for practical applications to harness its full potential. This includes developing novel materials and structures as well as improving the reliability and performance of memristors in various applications. This paper provides a comprehensive overview of the current advancements in memristor technology and their potential impact on the design of future electronic systems, focusing on its applications in the analog domain. By exploring the latest research and development in this field, researchers can gain valuable insights into how analog memristors can be integrated into their designs to achieve enhanced performance and efficiency. The paper delves into the fundamental principles of memristor technology, exploring its unique characteristics and advantages over traditional electronic components. It discusses the potential impact of memristors and challenges in the analog field of electronics, and highlights the progress made in their integration with existing circuitry, enabling novel functionalities and improved performance. Furthermore, it highlights ongoing research efforts to improve the performance and reliability of memristors, as well as the potential limitations and challenges that need to be addressed for widespread adoption, including variability in performance and reliability.

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“…Studies have expanded to encompass the analysis of monotone increasing and piecewise-linear nonlinear memristor models in both inverting and non-inverting operational amplifier circuits [ 7 , 8 ]. In the realm of signal processing, memristors have been leveraged to enhance ultra-wideband systems [ 9 , 10 , 11 ], thereby reducing signal processing power. Additionally, they have been applied in fine-resolution programmable resistors, programmable gain amplifiers, and differential amplifiers [ 12 , 13 , 14 ].…”

Section: Introductionmentioning

confidence: 99%

Exploring the Reconfigurable Memory Effect in Electroforming-Free YMnO3-Based Resistive Switches: Towards a Tunable Frequency Response

Zhao,

Du,

Dellith

et al. 2024

Materials

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Memristors, since their inception, have demonstrated remarkable characteristics, notably the exceptional reconfigurability of their memory. This study delves into electroforming-free YMnO3 (YMO)-based resistive switches, emphasizing the reconfigurable memory effect in multiferroic YMO thin films with metallically conducting electrodes and their pivotal role in achieving adaptable frequency responses in impedance circuits consisting of reconfigurable YMO-based resistive switches and no reconfigurable passive elements, e.g., inductors and capacitors. The multiferroic YMO possesses a network of charged domain walls which can be reconfigured by a time-dependent voltage applied between the metallically conducting electrodes. Through experimental demonstrations, this study scrutinizes the impedance response not only for individual switch devices but also for impedance circuitry based on YMO resistive switches in both low- and high-resistance states, interfacing with capacitors and inductors in parallel and series configurations. Scrutinized Nyquist plots visually capture the intricate dynamics of impedance circuitry, revealing the potential of electroforming-free YMO resistive switches in finely tuning frequency responses within impedance circuits. This adaptability, rooted in the unique properties of YMO, signifies a paradigm shift heralding the advent of advanced and flexible electronic technologies.

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Compact memristor‐based ultra‐wide band chirp pulse generator

Cited by 6 publications

References 15 publications

Variability analysis of resistive ternary content addressable memories

Variability analysis of resistive ternary content addressable memories

Overview of Memristor-Based Design for Analog Applications

Exploring the Reconfigurable Memory Effect in Electroforming-Free YMnO3-Based Resistive Switches: Towards a Tunable Frequency Response

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