Compact power electronic modules realized by PCB embedding technology

Löher, Thomas; Karaszkiewicz, S.; Böttcher, Lars; Ostmann, A.

doi:10.1109/icsj.2016.7801277

Cited by 15 publications

(7 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In PCB embedded packaging, conventional chip bonding technologies are still applicable, such as soldering [108] and sintering [103]. Especially, nano-silver sintering is widely used due to its high thermal conductivity and low CTE [109]. However, the wire-bonding connection is no longer suitable here.…”

Section: B Pcb Embedded Technologymentioning

confidence: 99%

See 1 more Smart Citation

Automotive Power Module Packaging: Current Status and Future Trends

et al. 2020

View full text Add to dashboard Cite

Semiconductor power modules are core components of power electronics in electrified vehicles. Packaging technology often has a critical impact on module performance and reliability. This paper presents a comprehensive review of the automotive power module packaging technologies. The first part of this paper discusses the driving factors of packaging technology development. In the second section, the design considerations and a primary design process of module packaging are summarized. Besides, major packaging components, such as semiconductor dies, substrates, and die bonding, are introduced based on the conventional packaging structure. Next, technical details and innovative features of state-of-the-art automotive power modules from major suppliers and original equipment manufacturers are reviewed. Most of these modules have been applied in commercial vehicles. In the fourth part, the system integration concept, printed circuit board embedded packaging, three-dimensional packaging, press pack packaging, and advanced materials are categorized as promising trends for automotive applications. The advantages and drawbacks of these trends are discussed, and it is concluded that a preferable overall performance could be achieved by combining multiple technologies. INDEX TERMS Electric vehicles, power electronics, semiconductor device packaging TABLE I PRIMARY DESIGN CONSIDERATIONS OF MODULE PACKAGING Design considerations Details Size Volume, weight, power density, energy density. Electrical performance Current rating, voltage rating, switching frequency range, power loss, electrical insulation, electromagnetic interference (EMI). Thermal management Temperature distribution, thermal resistance (Rth), heat capacity, coefficient of thermal expansion (CTE). Mechanical strength Thermal stress distribution, material properties (Tensile strength, flexural strength, peel strength, etc.), external shock and vibration. Reliability and fatigue Joints failure, crack propagation, delamination, lifetime under temperature and power cycling. Manufacturability and assembly Manufacture procedure, process temperature and pressure, external connections.

show abstract

Section: B Pcb Embedded Technologymentioning

confidence: 99%

“…In [103], the EU project "H M " designed a module integrated with surface mounted devices and the heatsink. In [109], a 10 kW IGBT high bridge module from Fraunhofer IZM is reported. In [104], ABB Corporation reveals a 1200V/25A IGBT inverter module.…”

Section: B Pcb Embedded Technologymentioning

confidence: 99%

Automotive Power Module Packaging: Current Status and Future Trends

et al. 2020

View full text Add to dashboard Cite

show abstract

“…In order to solve these problems, new packaging interconnection technologies and materials need to be investigated to push the development of SiC power module. So far, there have been development in wire-bondless interconnections for power module, such as flip chip and copper clip connection [12], multilayer planar interconnection [13], power overlay interconnect [14], copper pin connection [9], press-pack [15], power chip-on-chip [16], transfer molded power module [17], and PCB embedded package [1] [18]- [21].…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, several PCB embedded package technologies have been developed for IGBT module, power diode, and GaN HEMT. Leadframe based PCB embedded package technology is one of the major representatives [1] [19]- [21]. The bottom side of a power device is soldered or sintered onto a copper leadframe, the resulting assembly is then fully embedded in prepreg.…”

Section: Introductionmentioning

confidence: 99%

Characterization of PCB Embedded Package Materials for SiC MOSFETs

Hou

Wang

Lin

et al. 2019

IEEE Trans. Compon., Packag. Manufact. Technol.

View full text Add to dashboard Cite

In this paper, a novel fan-out panel-level PCB embedded package technology for SiC MOSFET power module is presented to address parasitic inductances, heat dissipation, and reliability issues that are inherent with aluminum wires used in conventional packaging scheme. To withstand high temperature beyond 175 °C and high voltage over 1.2 kV and improve thermo-mechanical reliability of the fan-out panel-level PCB embedded SiC power module, BT laminate and prepreg with high temperature stability, high dielectric strength, CTE matching with SiC, and high Tg are selected as PCB embedded package materials. Then, high temperature stabilities, dielectric breakdown strength, and thermo-mechanical performances of the embedded materials are characterized. The experimental results show that the PCB embedded materials can withstand high temperature beyond 200 °C and high voltage above 1.2 kV. Tg is as high as over 260 °C and CTE is matching with SiC. Besides, in order to provide one guideline for the high-temperature and high-pressure laminating process during the PCB embedded SiC MOSFETs packaging, cure kinetics of BT prepreg are analyzed. The results show that one-hour curing time at 280 °C curing temperature and two-hour curing time at 210 °C curing temperature can ensure the full cure of the BT prepreg.

show abstract

“…T HE increased demand for more reliable and efficient power conversion systems [1], [2], with focus on more efficient semiconductor power switch, which being the main component in the system determines the overall performance, reliability and efficiency of the whole system [3], promotes wide bandgap semiconductors, such as Silicon Carbide (SiC) and G Gallium Nitride (GaN), as prime candidates to replace the traditional Silicon (Si) technology [4]. GaN-based High Electron Mobility Transistors (HEMTs) are considered to be the future power semiconductor switches [5], [6] at least for voltage operation range up to 650 V. However, the higher GaN cost and poorer reliability compared to Si counterparts are two major obstacles hindering the much anticipated wide commercialization of GaN power switches [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-In this work the advantages of GaN HEMTs grown on native GaN substrates over GaN/Si or GaN/Sapphire substrates are investigated, and correlated with epitaxial quality. TEM plane view and cross section analysis of GaN/GaN revealed dislocation density lower than 1 × 10 6 cm −2 , which is at least 3 orders of magnitude lower than the case of GaN/Si or GaN/Sapphire. In the case of GaN/Si, the dislocations did not necessarily originate from the substrate/nucleation layer interface, but the strain relief and isolation buffer stacks were main contributors to the dislocation density. GaN/GaN HEMTs demonstrated superior electrical and thermal performance. GaN/GaN demonstrated 3 orders of magnitude lower off-state leakage, current collapse (Ron increase) after stress bias less than 15% compared to 50% in the case of GaN/Si, and 2% drop of the onstate current due to self-heating in DC operation as compared to 13% and 16% for GaN/Si and GaN/Sapphire respectively. The GaN/Si thermal performance approached GaN/GaN only by substrate removal. Therefore GaN/GaN can allow high on-state current, low off-state leakage current, minimal current collapse, and enhanced thermal dissipation capability at the same time, which can be directly correlated to the absence of high dislocation densities.

show abstract

Compact power electronic modules realized by PCB embedding technology

Cited by 15 publications

References 0 publications

Automotive Power Module Packaging: Current Status and Future Trends

Automotive Power Module Packaging: Current Status and Future Trends

Characterization of PCB Embedded Package Materials for SiC MOSFETs

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Contact Info

Product

Resources

About