Comparative Analysis of OFET for Low-Power Flexible Electronic Devices Manufacturing

Vasudeo, Bodade Sandip; Krishna, Banoth; Kumar, Parveen; Gill, Sandip Singh; Raj, Balwinder

doi:10.1201/9781003203681-18

Advances in Manufacturing Technology 2022

DOI: 10.1201/9781003203681-18

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Comparative Analysis of OFET for Low-Power Flexible Electronic Devices Manufacturing

Bodade Sandip Vasudeo¹,

Banoth Krishna²,

Parveen Kumar³

et al.

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2024

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“…TFET shows low I ON that can be controlled by many methods like dual metal gate, triple metal gate, tunneling junction with two materials, dual metal gate and many others. [9][10][11][12][13][14][15] To increase the device density nanowire structures are mostly preferred. Today NW-TFETs are in demand because of its latest density, good electrostatic control on the channel, less SS.…”

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confidence: 99%

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Kumar,

Raj,

Wadhwa

et al. 2024

ECS J. Solid State Sci. Technol.

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This work is based on the analysis and designing of gate all around N+-doped layer nanowire tunnel field-effect transistors (NTFET) without junctions for application in a biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS), and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N+ doped layer (1×1020cm-3). The change in the subthreshold-slope (SS), drain current (ID), transconductance(gm), and ratio of ION/IOFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The junctionless GAA-NTFET (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for APTS biomolecule which is suitable for sensor design application.

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mentioning

confidence: 99%

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Kumar,

Raj,

Wadhwa

et al. 2024

ECS J. Solid State Sci. Technol.

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Comparative Analysis of OFET for Low-Power Flexible Electronic Devices Manufacturing

Cited by 1 publication

References 0 publications

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

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