Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging

Howlader, M. M. R.; Suga, Tadatomo

doi:10.1117/1.3500747

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…This treatment resulted in a void-free bonded interface with high bond strength. The high bond strength is attributed to the adhesion between the hydrophilic and reactive surfaces and the electrostatic forces produced by the anodic step in the bonding process [13][14][15][16][17][18][19][20][21][22][23]27,28,99,100,102,[104][105][106][107].…”

Section: Surface Activated Bondingmentioning

confidence: 99%

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Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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Section: Surface Activated Bondingmentioning

confidence: 99%

“…Surface activated bonding (SAB) is an example of the direct wafer bonding [13]. The SAB technologies do not require high temperature, high pressure, and extra additives to provide bonding interface with high bond strength, high electrical conductivity and low optical loss [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Effects of surface activation time on Si-Si direct wafer bonding at room temperature

Yang

Deng

et al. 2021

Mater. Res. Express

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Surface activated bonding (SAB) based on argon ion beam irradiation was used to directly bond Si and Si wafers at room temperature, and the effects of the surface activation time on the Si-Si bonding were investigated. The experimental results show that the surface activation treatment with a proper duration is beneficial to the reduction of surface roughness of Si wafers and the realization of high bonding strength. The Si-Si wafers bonded after the surface activation of 420 s has an extremely low percentage of area covered by voids (0.08%) and a high bonding strength (9.45 MPa). Meanwhile, the annealing at 500 °C does not lead to a significant change in the percentage of area covered by voids for Si-Si bonding. Besides, the transmission electron microscope characterization indicates that the argon ion beam irradiation of 180 s can result in the formation of an amorphous Si layer with a thickness of approximately 10.6 nm at the Si-Si bonding interface, and the whole cross-section structure of the Si-Si bonding consists of a Si substrate, an amorphous Si layer and a Si substrate.

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Nanobonding: A key technology for emerging applications in health and environmental sciences

Howlader

Deen

Suga

2015

Jpn. J. Appl. Phys.

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In this paper, surface-activation-based nanobonding technology and its applications are described. This bonding technology allows for the integration of electronic, photonic, fluidic and mechanical components into small form-factor systems for emerging sensing and imaging applications in health and environmental sciences. Here, we describe four different nanobonding techniques that have been used for the integration of various substrates — silicon, gallium arsenide, glass, and gold. We use these substrates to create electronic (silicon), photonic (silicon and gallium arsenide), microelectromechanical (glass and silicon), and fluidic (silicon and glass) components for biosensing and bioimaging systems being developed. Our nanobonding technologies provide void-free, strong, and nanometer scale bonding at room temperature or at low temperatures (<200 °C), and do not require chemicals, adhesives, or high external pressure. The interfaces of the nanobonded materials in ultra-high vacuum and in air correspond to covalent bonds, and hydrogen or hydroxyl bonds, respectively.

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Comparative annealing effect on bonded wafers in air and ultrahigh vacuum for microelectromechanical systems/microfluidics packaging

Cited by 4 publications

References 21 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Effects of surface activation time on Si-Si direct wafer bonding at room temperature

Nanobonding: A key technology for emerging applications in health and environmental sciences

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