Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Manandhar, Mahesh B.; Matin, Mohammad A.

doi:10.3390/jlpea11030033

Cited by 3 publications

(1 citation statement)

References 30 publications

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“…Wurtzite nitrides with tunable wide bandgaps from 3.4 to 6.0 eV, [ 1 ] high thermal conductivity, [ 2 ] and high breakdown electric fields [ 3 ] are one of the most promising alternatives of toxic mercury [ 4 ] to fabricate deep ultraviolet (DUV) light sources, which have been widely applied, such as water sterilization, [ 5 ] air purification, [ 6 ] medical disinfecting, and so on. [ 7 ] However, the severe external quantum efficiency (EQE) dropping due to electron leakage at large current injection [ 8 ] and poor p‐type doping [ 9,10 ] needs to be conquered for further high‐power applications.…”

Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Effects on the Double‐Barrier Electron Blocking Layer of a Nitride Deep‐UV Light‐Emitting Diode

Gao

et al. 2023

Physica Status Solidi (b)

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The multi‐quantum‐barrier electron blocking layer (EBL) is reported to significantly improve efficiency by nearly 3 times over a single barrier in deep‐UV AlGaN light‐emitting diodes to deal with electron leakage. The improvement is usually attributed to the enhanced effective barrier height, and this article aims to explore the benefits of the tunneling effect by calculating the tunneling currents of electrons and holes through an Al0.6Ga0.4N/AlyGa1−yN double‐barrier EBL under external bias from opposite directions. The results show that the tunneling current for holes Jh is several orders of magnitude higher than that of the electrons Je as the barriers are with Al mole fraction y greater than 0.75 and thickness larger than 2 nm, which promises effective hole injection by tunneling without much electron leakage. Tunneling mechanism works better in EBL with higher and thicker barriers because the tunneling coefficients of light hole drop much slower than electrons due to its small effective mass. A proper distance between the barriers is needed to avoid electron leakage while holes tunnel through the EBL. Built‐in electric fields tilt the band to enlarge the peak‐to‐valley ratio. This work indicates that the tunneling effect substantially facilitates a multibarrier EBL to enhance carrier‐injection efficiency.

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Section: Introductionmentioning

confidence: 99%

Resonant Tunneling Effects on the Double‐Barrier Electron Blocking Layer of a Nitride Deep‐UV Light‐Emitting Diode

Gao

et al. 2023

Physica Status Solidi (b)

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Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms

et al. 2023

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Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms

Grashchenko,

Kukushkin,

Osipov

et al. 2023

Izvestiâ Rossijskoj akademii nauk. Mehanika tverdogo tela

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In this article, the mechanical and deformation characteristics of epitaxial films of AlGaN solid solutions formed on silicon substrates of crystallographic orientations (001), (011) and (111) with a silicon carbide (SiC/Si) buffer layer synthesized by the method of the coordinated substitution of atoms were studied using the nanoindentation method. The growth of AlGaN epitaxial layers were carried out both directly on the SiC/Si hybrid substrate and on the SiC/Si substrate additionally coated with an AlN buffer layer. The morphology and structure of the surface of the layers was studied by atomic force microscopy. The structural characteristics of hybrid AlGaN substrates and films grown with and without an aluminum nitride buffer layer were measured. An unambiguous relationship has been established between the mechanical properties (elasticity modulus and hardness) and the surface structure of AlGaN films. It has been found that the AlN buffer layer has a significant effect on the mechanical and deformation properties of AlGaN films at the initial moment of indentation, when the layer is predominantly elastically deformed. The roughness was determined and the surface morphology of the AlGaN films was characterized. For the first time, experimentally, using the nanoindentation method, the hardness parameters and the reduced modulus of elasticity of epitaxial AlGaN grown on hybrid SiC/Si and AlN/SiC/Si substrates were measured.

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Comparative Modelling and Thermal Analysis of AlGaN/GaN Power Devices

Cited by 3 publications

References 30 publications

Resonant Tunneling Effects on the Double‐Barrier Electron Blocking Layer of a Nitride Deep‐UV Light‐Emitting Diode

Resonant Tunneling Effects on the Double‐Barrier Electron Blocking Layer of a Nitride Deep‐UV Light‐Emitting Diode

Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms

Nanoindentation of AlGaN Films Formed on SiC/Si Substrates Grown by the Method of Coordinated Substitution of Atoms

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