2006
DOI: 10.1143/jjap.45.3358
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Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process

Abstract: We report the fabrication and DC and microwave characteristics of 0.12 µm double-recessed T-gate AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors (PHEMTs) using dielectric-assisted process. Silicon nitride layers 300 and 200 Å thick were deposited by plasma-enhanced chemical vapor deposition (PECVD) at 260 °C to protect the device and to define the gate footprint. The double-recess process was carried out by two different etching techniques to obtain double-recessed T-gates with 0.12 µm gate… Show more

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