Comparative study of electron- and photo-induced structural transformations on the surface of As35S65 amorphous thin films

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

“…This transformation causes the structure of the films to become more similar to that of bulk glass. The fraction of each chemical environment becomes closer to the distribution of S bonds in bulk As-S glass of corresponding composition [24,28]. The most likely phenomenon responsible for the rearrangement of S bonds is photostructural transformation caused by the UV part of the halogen light spectrum [16] and photoinduced release of organic residual.…”

“…It has been used primarily to investigate the structure of thermally evaporated ChG thin films [8,[26][27][28], while such structural information is not available for SCF. Therefore, in the present study we focus on the binary As x S 100 − x SCF as a model ChG system.…”

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

“…A limited number of thorough experimental studies devoted to the direct formation of SR by e-beam exposure have been performed recently. These studies mainly have been focused on the selected homogeneous (stoichiometric) compositions like Ge 0.2 Se 0.8 , As 0.4 S 0.6 , As 0.4 Se 0.6 films [17][18][19][20][21][22][23][24] or nanostructured chalcogenide layers [25,26].…”

Structure of SbxGe40-xSe60 glasses around 2.67 average coordination number

“…High-resolution X-ray photoelectron spectroscopy (HR-XPS) technique is used to determine the chemical environments and electronic states of elements in these glasses. As the suitability of HR-XPS for determining the structure of network chalcogenide glasses and thin films is well established [7][8][9], it should help establish the structure of so called nanophases, if present. This kind of knowledge would have a significant impact on the practical applications of SbGe-Se glasses as IR optical materials [10], multilayered waveguides for evanescent waveguide sensing [11], phase-change memory devices [12], etc.…”