Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications

Beeler, Richard T.; Mathews, Jay; Weng, Change; Tolle, John; Roucka, Radek; Chizmeshya, Andrew; Juday, Reid; Bagchi, S.; Menéndez, José; Kouvetakis, John

doi:10.1016/j.solmat.2010.08.016

Cited by 30 publications

(15 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the AFM analysis, the surface morphology of these samples is relatively rough due most probably to the presence of APDs in the GaAs crystals [5,[25][26][27][28], as shown in Figs.…”

Section: Ii) Effect Of Gaas Epilayer Thicknessmentioning

confidence: 99%

“…Nonetheless, the growth of polar epilayers (GaAs) on non-polar substrates (Ge) is rather challenging, as it encourages the formation of structural defects such as antiphase domains (APDs), leading to the deterioration of optical properties of the devices fabricated upon it, which is unsuitable for industrial applications [5]. Great strides have been made by various scientists in resolving the problems of APDs appearing in GaAs epilayers on Ge substrates.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

Wong¹,

Bennett²,

Galiana³

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The selection of appropriate characterisation methodologies is vital for analysing and comprehending the sources of defects and their influence on the properties of heteroepitaxially grown III-V layers. In this work we investigate the structural properties of GaAs layers grown by Metal-Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates -(100) with 6⁰ offset towards <111> -under various growth conditions. Synchrotron X-ray topography (SXRT) is employed to investigate the nature of extended linear defects formed in GaAs epilayers. Other X-ray techniques, such as reciprocal space mapping (RSM) and triple axis ω-scans of (00l)-reflections (l = 2, 4, 6) are used to quantify the degree of relaxation and presence of antiphase domains (APDs) in the GaAs crystals. The surface roughness is found to be closely related to the size of APDs formed at the GaAs/Ge heterointerface, as confirmed by X-ray diffraction (XRD), as well as atomic force microscopy (AFM), and transmission electron microscopy (TEM).

show abstract

“…From the AFM analysis, the surface morphology of these samples is relatively rough due most probably to the presence of APDs in the GaAs crystals [5,[25][26][27][28], as shown in Figs.…”

Section: Ii) Effect Of Gaas Epilayer Thicknessmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

Wong¹,

Bennett²,

Galiana³

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…As a result, significant cost savings would be made possible if the bulk Ge substrates could be replaced with our virtual analogs consisting of micron-thick, or even less, Ge buffers grown on Si wafers 37 . The cost reduction per solar cell can be as high as 75% when the much lower prices and larger areas of Si wafers are considered 38 . Additionally, this approach would offer a viable path towards the monolithic integration of mismatched Ge/Si in CMOS circuits and overcome their imminent performance limitation 39,40 .…”

Section: Introductionmentioning

confidence: 99%

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

Bioud¹,

Boucherif²,

Myronov³

et al. 2019

Nat Commun

View full text Add to dashboard Cite

The monolithic integration of III-V compound semiconductor devices with silicon presents physical and technological challenges, linked to the creation of defects during the deposition process. Herein, a new defect elimination strategy in highly mismatched heteroepitaxy is demonstrated to achieve a ultra-low dislocation density, epi-ready Ge/Si virtual substrate on a wafer scale, using a highly scalable process. Dislocations are eliminated from the epilayer through dislocation-selective electrochemical deep etching followed by thermal annealing, which creates nanovoids that attract dislocations, facilitating their subsequent annihilation. The averaged dislocation density is reduced by over three orders of magnitude, from ~108 cm−2 to a lower-limit of ~104 cm−2 for 1.5 µm thick Ge layer. The optical properties indicate a strong enhancement of luminescence efficiency in GaAs grown on this virtual substrate. Collectively, this work demonstrates the promise for transfer of this technology to industrial-scale production of integrated photonic and optoelectronic devices on Si platforms in a cost-effective way.

show abstract

“…Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications driving the efforts for integrating Ge with Si include: high mobility channel in metal-oxide-semiconductor field-effect transistors [1], infrared photodetector in Si-based optical devices [2], and template for III-V growth to fabricate high efficiency solar cells [3].…”

Section: Introductionmentioning

confidence: 99%

“…Ge wafers are the commonly used substrates for the fabrication of high efficiency III-V tandem solar cells [4][5][6]. Though cheaper than III-V materials, Ge wafers are over 100 times more expensive than Si accounting for more than 50% of the cell cost [3]. Compared with Ge wafer, Si wafer is an alternative with low cost, superior mechanical properties, and higher band gap more desirable for the bottom cell in a double or triple stack [7].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of Ge on Si by Magnetron Sputtering

Liu¹,

Hao²,

Ho‐Baillie³

et al. 2018

Epitaxy

View full text Add to dashboard Cite

Epitaxial growth of Ge on Si has received considerable attention for its compatibility with Si process flow and the scarcity of Ge compared with Si. Applications that drive the efforts for integrating Ge with Si include high mobility channel in metal-oxide-semiconductor field-effect transistors, infrared photodetector in Si-based optical devices, and template for III-V growth to fabricate high-efficiency solar cells. Epitaxy Ge on Si can be used as a virtual Ge substrate for fabrication of III-V solar cells, which has advantages of superior mechanical properties and low cost over Ge wafers. This work investigates the epitaxial growth of Ge on Si using magnetron sputtering, which is an environment-friendly, inexpensive, high throughput, and simple deposition technique. The effects of substrate temperature on the properties of Ge are analyzed. A novel method to epitaxially grow Ge on Si by magnetron sputtering at low temperature is developed using one-step aluminumassisted crystallization. By applying an in-situ low temperature (50-150°C) heat treatment in between Al and Ge sputter depositions, the epitaxial growth of Ge on Si is achieved. This method significantly lowers the required temperature for and therefore the cost of epitaxial growth of Ge on Si.

show abstract

Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si(100) substrates for low-cost photovoltaic applications

Cited by 30 publications

References 21 publications

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

Structural investigation of MOVPE-grown GaAs on Ge by x-ray techniques

Uprooting defects to enable high-performance III–V optoelectronic devices on silicon

Epitaxial Growth of Ge on Si by Magnetron Sputtering

Contact Info

Product

Resources

About