Comparative Study of MOSFET and IGBT for High Repetitive Pulsed Power Modulators

Jang, Sung-Roc; Ryoo, Hong-Je; Goussev, G.; Rim, Geun-Hie

doi:10.1109/tps.2012.2186592

Cited by 35 publications

(4 citation statements)

References 23 publications

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“…Besides, the all-solid-state PGs offer high stability, extended operating life, and low electromagnetic interference [10,11]. However, early silicon-based semiconductor switches, with either limited current capability (Si-MOSFET) or slower switching speed (IGBT), faced challenges in meeting the performance requirements of clinical nsPFA [5,12,13].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

Zhu,

Shi,

Guo

et al. 2023

Preprint

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<div>Nanosecond pulsed field ablation (nsPFA) is a promising modality for clinical tissue ablation. The performance of the pulse generator (PG) strongly depends on the switching characteristics of the SiC MOSFET. Currently, many key parameters listed in SiC MOSFET datasheets are determined using double-pulse test circuits with inductive loads, whereas loads in nsPFA-applications are predominantly resistive. This study proposes a test scheme for SiC MOSFETs under nsPFA-like operating conditions. Key parameters to be evaluated are pulsed drain current (IDM), on-resistance (Ron), rise/fall time, turn-on/off delay, and minimum pulse width. The results show significant differences between manufacturer datasheet values and experimental data. For example, one switch under test has an Idm value of 40 A in the datasheet but 153 A in experimental test. This study recommends that custom testing of SiC MOSFETs is essential when designing PGs for nsPFA-applications.</div>

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Section: Introductionmentioning

confidence: 99%

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

Zhu,

Shi,

Guo

et al. 2023

Preprint

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“…These devices, in comparison with GTOs and BJTs, can operate with higher switching frequencies, requiring smaller output passive filters, translating into a more compact and cheaper solution. In addition, the input impedance is higher, which results in low power consumption [12]. However, when using IGBTs, it is needed to connect them in series with diodes, in order to ensure reverse-blocking, thus it is avoided that the current flows by the antiparallel-diodes of IGBTs.…”

Section: Introductionmentioning

confidence: 99%

A Novel Single-Phase Shunt Active Power Filter Based on a Current-Source Converter with Reduced Dc-Link

Oliveira

Barros

Afonso

et al. 2020

Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering

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Nowadays, the majority of electronic equipment behave as nonlinear loads, introducing Power Quality (PQ) problems into the Power Grid (PG), namely, current harmonics and low power factor. These PQ problems contribute to the reduction of the efficiency of the transmission and distribution PG, as well as induce the malfunctioning of sensitive loads connected to the PG. Therefore, the development of equipment able to mitigate these PQ problems is extremely important. In this context, this paper presents a novel single-phase Shunt Active Power Filter (SAPF) based on a current-source converter, where the key differencing factor, when compared with the conventional approach, is the reduced dc-link. As the proposed topology requires a reduced dc-link, it represents a relevant advantage, since a typical current-source converter needs an inductor with a high inductance in dc-link, which results in higher losses, costs and component sizing. The proposed SAPF with reduced dc-link is introduced in detail along the paper and a comprehensive comparison with the conventional SAPF is established based on computer simulations. Besides, an experimental validation was carried-out with a developed laboratory prototype, validating the main advantages of the proposed SAPF with reduced dc-link.

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“…The Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) is a basic semiconductor device in the production of Very Large Scale Integrated (VLSI) circuits. Its characteristics of simple structure, low power consumption and economical fabrication have facilitated its application in the design of portable electronic devices [1,2]. Also, the high impedance of the MOSFET makes it useful for low-current circuits to operate effectively.…”

Section: Introductionmentioning

confidence: 99%

Effect of radius on various parameters of cylindrical surrounding double-gate (CSDG) MOSFET

Oyedeji¹,

Srivastava²

2018

IJET

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The MOSFET is an integral component of electronics device and scaling the device is continuously in progress. This research work intro-duces a novel structure of the Cylindrical Surrounding Double-Gate (CSDG) MOSFET to improve scaling and to suppress Short Channel Effect (SCE). In order to achieve this improvement, the drift-diffusion components are used to analyze the drain current of the device through the Pao-Sah integral. Then transconductance is derived to indicate an improved performance of the proposed design. The capaci-tance characteristics of this MOSFET is also analyzed through the equivalent capacitance model as well as the analysis of the carrier mobility, in which it has been observed that scaling of the device supports increase in mobility of the charge carrier.

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Comparative Study of MOSFET and IGBT for High Repetitive Pulsed Power Modulators

Cited by 35 publications

References 23 publications

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

Evaluation of SiC MOSFET Key Parameters for Nanosecond Pulsed Field Ablation: Investigating Discrepancies Between Experimental Data and Manufacturer Datasheet Values

A Novel Single-Phase Shunt Active Power Filter Based on a Current-Source Converter with Reduced Dc-Link

Effect of radius on various parameters of cylindrical surrounding double-gate (CSDG) MOSFET

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