Comparative study of the GaAs(100) surface cleaned by atomic hydrogen

Analysis of mechanism of carbon removal from GaAs(100) surface by atomic hydrogen

“…However, even if it is clear that hydrocarbons are the reaction products, there is no clear evidence for the specific form of the hydrocarbon [8,14,39]. Thus, in order to identify the reaction products upon the atomic hydrogen irradiation we have performed mass spectrometry during the treatment of the EPI sample.…”

“…GaAs(1 0 0) surface [14] by applying mass spectrometry (MS), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Using this set of surface analysis methods, it was possible for the first time to show directly that one of the major reaction products is methane.…”

Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots

“…On patterned substrates, therefore, the oxide is normally removed by exposure to a hydrogen atom flux, which allows the oxide to be removed at lower temperatures, $400 1C, without surface pitting occurring, due to the reaction Ga 2 O 3 +4H-Ga 2 O+2H 2 O [10]. However, this method is known to lead to Fermi-level surface pinning and possible degradation of the surface if the hydrogen dose is not carefully controlled [11,12], and care must be taken to avoid surface contamination being introduced during the hydrogenation [13].…”

Ga assisted oxide desorption on GaAs(001) studied by scanning tunnelling microscopy

“…H assisted oxide removal has proved a powerful alternative clean-up technique [11], unfortunately a H source is not usually available on III-V MBE systems. Other works have utilised a precise thickness of sacrificial GaAs capping layers grown directly onto the oxide [12], which has been shown to be a viable technique for protecting highly thermally stable AlGaAs structures [13][14][15].…”